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PM300CLA120 Datasheet(PDF) 8 Page - Mitsubishi Electric Semiconductor

Part # PM300CLA120
Description  INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PM300CLA120 Datasheet(HTML) 8 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI <INTELLIGENT POWER MODULES>
PM300CLA120
FLAT-BASE TYPE
INSULATED PACKAGE
Jul. 2005
101
103
7
5
3
2
0
102
7
5
3
2
0.5
1
1.5
2
3
2.5
4
4
VD = 15V
Tj = 25
°C
Tj = 125
°C
101
23
5 7
102
23
5 7
103
44
10–3
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
10–323 5 710–223 5 710–1
10–523 5 710–423 5 7
23 5 7
100 23 57101
Single Pulse
Per unit base = Rth(j – c)Q = 0.08
°C/W
10–3
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
10–323 5 710–223 5 710–1
10–523 5 710–42 3 57
2 3 57
100 23 57101
Single Pulse
Per unit base = Rth(j – c)F = 0.13
°C/W
10–2
101
10–1
100
7
5
3
4
2
7
5
3
4
2
7
5
3
4
2
7
5
3
4
2
7
5
3
4
2
7
5
3
4
2
100
103
101
102
Tj = 25
°C
Tj = 125
°C
Inductive load
VCC = 600V
VD = 15V
trr
Irr
0
10
20
30
40
50
60
25
0
510
15
20
ID VS. fc CHARACTERISTICS
(TYPICAL)
CARRIER FREQUENCY fc (kHz)
P-side or N-side
VD = 15V
Tj = 25
°C
EMITTER-COLLECTOR VOLTAGE VEC (V)
DIODE FORWARD CHARACTERISTICS
(TYPICAL)
DIODE REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
COLLECTOR RECOVERY CURRENT –IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT PART)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART)
TIME (s)


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