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LV5106FN Datasheet(PDF) 3 Page - Sanyo Semicon Device |
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LV5106FN Datasheet(HTML) 3 Page - Sanyo Semicon Device |
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3 / 6 page  LV5106FN No.8931-3/6 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit REG3 Output voltage 1 VO3 IO = 30mA, ECO = H 2.45 2.5 2.55 V Output voltage 2 VO3E IO = 30mA, ECO = L 2.43 2.5 2.57 V Drop out voltage VDR3 VBAT = 2.4V, IO = 30mA 0.06 0.12 V Load regulation ΔVOLO3 IO = 1 to 50mA 10 50 mV Line regulation ΔVOLN3 VBAT = 3.3 to 4.5V, IO = 1mA 10 60 mV Output voltage temperature coefficient ΔVO3/ΔTj Ta = -25 to 75 °C, IO = 30mA ±100 ppm/ °C Ripple rejection VR3 VBAT = 3.6V, IO = 30mA, VRR = -20dBV, fRR = 1kHz 65 dB Output noise voltage VON3 IO = 30mA, 20Hz < f < 20kHz 75 μVrms REG4 Output voltage VO4 IO = 30mA 2.91 3 3.09 V Drop out voltage VDR3 VBAT = 2.9V, IO = 30mA 0.06 0.12 V Load regulation ΔVOLO4 IO = 1 to 50mA 10 50 mV Line regulation ΔVOLN4 VBAT = 3.3 to 4.5V, IO = 1mA 10 60 mV Output voltage temperature coefficient ΔVO4/ΔTj Ta = -25 to 75 °C, IO = 30mA ±100 ppm/ °C Ripple rejection VR4 VBAT = 3.6V, IO = 30mA, VRR = -20dBV, fRR = 1kHz 55 dB Output noise voltage VON4 IO = 30mA, 20Hz < f < 20kHz 75 μVrms DET1 Detection voltage VD1 H →L 2.45 2.5 2.55 V Hysteresis width ΔVH1 75 125 175 mV Detection voltage temperature coefficient ΔVD1/ΔTj Ta = -25 to 75 °C ±100 ppm/ °C VBATDET Detection voltage VDB H →L 3.04 3.1 3.16 V Hysteresis width ΔVHB 93 155 217 mV Output pull-up resistance RPDETB 1.4 1.8 2.2 M Ω Detection voltage temperature coefficient ΔVDB/ΔTj Ta = -25 to 75 °C ±100 ppm/ °C Charge pump Output voltage 1 VCPO1 VBAT = 3.2 to 5.9V, Load current 80mA 4.8 5 5.2 V Oscillation frequency CPOSC 0.7 1 1.3 MHz Output ripple VRCP VBAT = 3.6, Load current 80mA ±200 mVp-p Efficiency η VBAT = 3.2, Load current 80mA 72 % LED driver LEDR output voltage VLR IO = 40mA 0 0.1 0.2 V LEDG output voltage VLG IO = 40mA 0 0.1 0.2 V LEDB output voltage VLB IO = 40mA 0 0.1 0.2 V LEDF output voltage VLF IO = 40mA 0 0.15 0.3 V LEDR OFF leak ILR 0 1 μA LEDG OFF leak ILG 0 1 μA LEDB OFF leak ILB 0 1 μA LEDF OFF leak ILF 0 1 μA Mic bias Output ON resistance RMO IO = 10mA 10 Ω OFF leakage current ILM 0 1 μA Output voltage (GP_0, 1) Output H level VOH IO = 1mA REG10 -0.3 REG10 V Output L level VOL IO = 1mA 0 0.3 V Continued on next page. |
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