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PM200CBS060 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. PM200CBS060
Description  INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PM200CBS060 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI <INTELLIGENT POWER MODULES>
PM200CBS060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2001
Parameter
Symbol
Supply Voltage Protected by
OC & SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Conditions
VCC(surge)
TC
Tstg
Viso
Ratings
VCC(PROT)
400
500
–20 ~ +110
–40 ~ +125
2500
Unit
V
°C
°C
Vrms
V
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = 125
°C Start
Applied between : P-N, Surge value
(Note-1)
60Hz, Sinusoidal
Charged part to Base, AC 1 min.
(Note-1) Tc(under the chip) measurement point is below.
TOTAL SYSTEM
(Unit : mm)
X
Y
Axis
Arm
UP
VP
WP
UN
VN
WN
IGBT
84.5
57.5
FWDi
84.5
45.8
IGBT
53.0
57.5
FWDi
53.0
45.8
IGBT
21.5
57.5
FWDi
21.5
45.8
IGBT
92.9
22.3
FWDi
81.1
22.3
IGBT
56.2
22.3
FWDi
44.4
22.3
IGBT
13.2
22.3
FWDi
24.9
22.3
2.3
2.3
3.3
2.4
0.3
1.0
3.3
1.0
1
10
Min.
Typ.
Max.
Collector-Emitter
Saturation Voltage
Collector-Emitter
Cutoff Current
–IC = 200A, VD = 15V, VCIN = 15V
(Fig. 2)
Tj = 25
°C
Tj = 125
°C
ELECTRICAL CHARACTERISTICS (Tj = 25
°C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Test Conditions
VCE(sat)
ICES
VEC
ton
trr
tc(on)
toff
tc(off)
Limits
0.8
1.7
1.7
2.2
1.2
0.15
0.4
2.4
0.5
Tj = 25
°C
Tj = 125
°C
FWDi Forward Voltage
Switching Time
VD = 15V, VCIN = 15V
↔0V
VCC = 300V, IC = 200A
Tj = 125
°C
Inductive Load
(Fig. 3)
VCE = VCES, VD = 15V (Fig. 4)
VD = 15V, IC = 200A
VCIN = 0V, Pulsed
(Fig. 1)
V
mA
V
µs
µs
µs
µs
µs
Unit
X
UV
W
PN
Bottom view
Y
°C/W
°C/W
°C/W
Rth(j-c’)Q
Rth(j-c’)F
Rth(c-f)
Symbol
Parameter
Test Conditions
Unit
Limits
Min.
Typ.
Max.
THERMAL RESISTANCES
Contact Thermal Resistance
*: If you use this value, Rth(f-a) should be measured just under the chips.
Tc measured point is just under the chips Inverter IGBT
part (per 1/6 module)
Tc measured point is just under the chips Inverter
FWDi part (per 1/6 module)
Case to fin, (per 1 module)
Thermal grease applied
Junction to case Thermal
Resistances
0.13*
0.21*
0.025


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