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PM100RSE060 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. PM100RSE060
Description  INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PM100RSE060 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RSE060
FLAT-BASE TYPE
INSULATED PACKAGE
Jul. 2005
TOTAL SYSTEM
WV
U
Tc
65mm
2.3
2.3
3.3
2.4
0.3
1.0
3.3
1.2
1
10
Min.
Typ.
Max.
Collector-Emitter
Saturation Voltage
Collector-Emitter
Cutoff Current
–IC = 100A, VD = 15V, VCIN = 15V
(Fig. 2)
Tj = 25
°C
Tj = 125
°C
ELECTRICAL CHARACTERISTICS (Tj = 25
°C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Test Condition
VCE(sat)
ICES
VEC
ton
trr
tc(on)
toff
tc(off)
Limits
0.8
1.7
1.7
2.2
1.2
0.15
0.4
2.4
0.6
Tj = 25
°C
Tj = 125
°C
FWDi Forward Voltage
Switching Time
VD = 15V, VCIN = 15V
↔0V
VCC = 300V, IC = 100A
Tj = 125
°C
Inductive Load (upper and lower arm)
(Fig. 3)
VCE = VCES, VCIN = 15V
(Fig. 4)
VD = 15V, IC = 100A
VCIN = 0V, Pulsed
(Fig. 1)
V
mA
V
µs
Unit
Parameter
Symbol
Supply Voltage Protected by
OC & SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Condition
VCC(surge)
TC
Tstg
Viso
Ratings
VCC(PROT)
400
500
–20 ~ +100
–40 ~ +125
2500
Unit
V
°C
°C
Vrms
V
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = 125
°C Start
Applied between : P-N, Surge value or without switching
(Note-1)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
(Note-1) Tc measurement point is as shown below. (Base plate depth 3mm)
°C/W
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(j-c’)Q
Rth(j-c’)F
Rth(j-c’)Q
Rth(j-c’)F
Rth(c-f)
Symbol
Test Condition
Unit
Limits
THERMAL RESISTANCES
(Note-2) TC measurement point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
Min.
Typ.
Max.
Inverter IGBT part (per 1 element), (Note-1)
Inverter FWDi part (per 1 element), (Note-1)
Brake IGBT part, (Note-1)
Brake FWDi part, (Note-1)
Inverter IGBT part (per 1 element), (Note-2)
Inverter FWDi part (per 1 element), (Note-2)
Brake IGBT part, (Note-2)
Brake FWDi part, (Note-2)
Case to fin, Thermal grease applied (per 1 module)
0.38
0.70
0.71
1.66
0.23
0.36
0.45
0.96
0.027
Parameter
Junction to case Thermal
Resistances
Contact Thermal Resistance


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