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PD55035STR-E Datasheet(PDF) 4 Page - STMicroelectronics

Part No. PD55035STR-E
Description  RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD55035STR-E Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical Characteristics
PD55035-E, PD55035S-E
4/22
2
Electrical Characteristics
TCASE = +25
oC
2.1
Static
2.2
Dynamic
Table 3.
Static
Symbol
Test conditions
Min.
Typ.
Max.
Unit
IDSS
VGS = 0V
VDS = 28V
1
µA
IGSS
VGS = 20V
VDS = 0V
1
µA
VGS(Q)
VDS = 28V
ID = 100mA
2.0
5.0
V
VDS(ON)
VGS = 10V
ID = 3A
0.8
0.95
V
GFS
VDS = 10V
ID = 3A
2.5
mho
CISS
VGS = 0V
VDS = 12.5V
f = 1MHz
92
pF
COSS
VGS = 0V
VDS = 12.5V
f = 1MHz
73
pF
CRSS
VGS = 0V
VDS = 12.5V
f = 1MHz
6.1
pF
Table 4.
Dynamic
Symbol
Test conditions
Min.
Typ.
Max.
Unit
POUT
VDD = 12.5V, IDQ = 200mA
f = 500MHz
35
W
GP
VDD = 12.5V, IDQ = 200mA, POUT = 35W, f = 500MHz
13
16.9
dB
nD
VDD = 12.5V, IDQ = 200mA, POUT = 35W, f = 500MHz
62
%
Load
mismatch
VDD = 15.5V, IDQ = 200mA, POUT = 35W, f = 500MHz
All phase angles
20:1
VSWR


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