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CY62256V
Document #: 38-05057 Rev. *F
Page 4 of 12
Capacitance[5]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz, VCC = VCC(typ.)
6pF
COUT
Output Capacitance
8
pF
Thermal Resistance
Parameter
Description
Test Conditions
SOIC
TSOPI
RTSOPI
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)[6]
Still Air, soldered on a 3 × 4.5 inch,
2-layer printed circuit board
68.45
87.62
87.62
°C/W
Θ
JC
Thermal Resistance
(Junction to Case)[5]
26.94
23.73
23.73
°C/W
AC Test Loads and Waveforms
Parameter
3.3V
Units
R1
1100
Ohms
R2
1500
Ohms
RTH
645
Ohms
VTH
1.750
Volts
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions[6]
Min.
Typ.[2]
Max.
Unit
VDR
VCC for Data Retention
1.4
V
ICCDR
Data Retention Current
VCC = 1.4V, CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
Com’l
0.1
3
µA
Ind’l
0.1
6
Auto
0.1
50
tCDR
[6]
Chip Deselect to Data
Retention Time
0ns
tR
[6]
Operation Recovery Time
tRC
ns
VCC
VCC
OUTPUT
R2
50 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
<5 ns
<5 ns
OUTPUT
VTH
Equivalent to:
THEVENIN EQUIVALENT
ALL INPUT PULSES
R1
RTH
Data Retention Waveform
Notes:
5. Tested initially and after any design or process changes that may affect these parameters.
6. No input may exceed VCC + 0.3V.
VCC(min)
VCC(min)
tCDR
VDR > 1.4V
DATA RETENTION MODE
tR
CE
VCC
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