CY62256
Document #: 38-05248 Rev. *F
Page 3 of 14
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65
°C to +150°C
Ambient Temperature with
Power Applied............................................. –55
°C to +125°C
Supply Voltage to Ground Potential
(Pin 28 to Pin 14) .............................................. –0.5V to +7V
DC Voltage Applied to Outputs
in High-Z State[3] ....................................–0.5V to VCC + 0.5V
DC Input Voltage[3] ................................ –0.5V to VCC + 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Ambient Temperature (TA)
[4]
VCC
Commercial
0
°C to +70°C
5V
± 10%
Industrial
–40
°C to +85°C
5V
± 10%
Automotive
–40
°C to +125°C
5V
± 10%
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
CY62256
−55
CY62256
−70
Unit
Min. Typ.[2]
Max.
Min. Typ.[2]
Max.
VOH
Output HIGH Voltage
VCC = Min., IOH = −1.0 mA
2.4
2.4
V
VOL
Output LOW Voltage
VCC = Min., IOL = 2.1 mA
0.4
0.4
V
VIH
Input HIGH Voltage
2.2
VCC
+0.5V
2.2
VCC
+0.5V
V
VIL
Input LOW Voltage
–0.5
0.8
–0.5
0.8
V
IIX
Input Leakage Current
GND < VI < VCC
–0.5
+0.5
–0.5
+0.5
µA
IOZ
Output Leakage Current GND < VO < VCC, Output Disabled
–0.5
+0.5
–0.5
+0.5
µA
ICC
VCC Operating Supply
Current
VCC = 5.5V,
IOUT = 0 mA,
f = fMax = 1/tRC
L25
50
25
50
mA
LL
25
50
25
50
ISB1
Automatic CE
Power-down Current—
TTL Inputs
VCC = 5.5V, CE > VIH,
VIN > VIH or VIN < VIL,
f = fMax
L
0.4
0.6
0.4
0.6
mA
LL
0.3
0.5
0.3
0.5
ISB2
Automatic CE
Power-down Current—
CMOS Inputs
VCC = 5.5V,
CE > VCC − 0.3V
VIN > VCC − 0.3V, or
VIN < 0.3V, f = 0
L2
50
2
50
µA
LL - Com’l
0.1
5
0.1
5
LL - Ind’l
0.1
10
0.1
10
LL - Auto
0.1
15
Capacitance[5]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz, VCC = VCC(typ.)
6pF
COUT
Output Capacitance
8
pF
Thermal Resistance[5]
Parameter
Description
Test Conditions
DIP
SOIC
TSOP
RTSOP
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 4.25 x 1.125 inch,
2-layer printed circuit board
75.61
76.56
93.89
93.89
°C/W
Θ
JC
Thermal Resistance
(Junction to Case)
43.12
36.07
24.64
24.64
°C/W
Notes:
3. VIL (min.) = −2.0V for pulse durations of less than 20 ns.
4. TA is the “Instant-On” case temperature.
5. Tested initially and after any design or process changes that may affect these parameters.
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