CY62158EV30 MoBL®
Document #: 38-05578 Rev. *D
Page 3 of 11
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature ..................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground Potential –0.3V to VCC(max) + 0.3V
DC Voltage Applied to Outputs
in High-Z State[5, 6]......................... –0.3V to VCC(max) + 0.3V
DC Input Voltage[5, 6] ..................... –0.3V to VCC(max) + 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage............................................ >2001V
(MIL-STD-883, Method 3015)
Latch up Current...................................................... >200 mA
Operating Range
Product
Range
Ambient
Temperature
(TA)
VCC[7]
CY62158EV30LL Industrial
–40°C to +85°C 2.2V – 3.6V
Electrical Characteristics (Over the Operating Range)
Parameter
Description
Test Conditions
45 ns
Unit
Min
Typ[4]
Max
VOH
Output HIGH Voltage
IOH = –0.1 mA
2.0
V
IOH = –1.0 mA, VCC > 2.70V
2.4
V
VOL
Output LOW Voltage
IOL = 0.1 mA
0.4
V
IOL = 2.1 mA, VCC > 2.70V
0.4
V
VIH
Input HIGH Voltage
VCC = 2.2V to 2.7V
1.8
VCC + 0.3V
V
VCC = 2.7V to 3.6V
2.2
VCC + 0.3V
V
VIIL
Input LOW Voltage
VCC = 2.2V to 2.7V
–0.3
0.6
V
VCC = 2.7V to 3.6V
–0.3
0.8
V
IIX
Input Leakage Current
GND < VI < VCC
–1
+1
µA
IOZ
Output Leakage Current
GND < VO < VCC, Output Disabled
–1
+1
µA
ICC
VCC Operating Supply Current f = fmax = 1/tRC VCC = VCCmax
IOUT = 0 mA
CMOS levels
18
25
mA
f = 1 MHz
1.8
3
mA
ISB1
Automatic CE
Power down Current —
CMOS Inputs
CE1 > VCC – 0.2V, CE2 < 0.2V
VIN > VCC – 0.2V, VIN < 0.2V)
f = fmax (Address and Data Only),
f = 0 (OE and WE), VCC = 3.60V
28
µA
ISB2[8]
Automatic CE
Power down Current —
CMOS Inputs
CE1 > VCC – 0.2V or CE2 < 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V,
f = 0, VCC = 3.60V
28
µA
Capacitance[9]
Parameter
Description
Test Conditions
Max
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
10
pF
COUT
Output Capacitance
10
pF
Notes
5. VIL(min) = –2.0V for pulse durations less than 20 ns.
6. VIH(max)= VCC + 0.75V for pulse duration less than 20 ns.
7. Full device AC operation assumes a 100
µs ramp time from 0 to VCC(min) and 200 µs wait time after VCC stabilization.
8. Only chip enables (CE1 and CE2) must be at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating.
9. Tested initially and after any design or process changes that may affect these parameters.
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