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CY62157EV30 Datasheet(PDF) 6 Page - Cypress Semiconductor

Part # CY62157EV30
Description  8-Mbit (512K x 16) Static RAM
Download  14 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62157EV30 Datasheet(HTML) 6 Page - Cypress Semiconductor

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CY62157EV30 MoBL®
Document #: 38-05445 Rev. *E
Page 6 of 14
Switching Characteristics
Over the Operating Range[13, 14]
Parameter
Description
45 ns (Ind’l/Auto-A)
Unit
Min
Max
Read Cycle
tRC
Read Cycle Time
45
ns
tAA
Address to Data Valid
45
ns
tOHA
Data Hold from Address Change
10
ns
tACE
CE1 LOW and CE2 HIGH to Data Valid
45
ns
tDOE
OE LOW to Data Valid
22
ns
tLZOE
OE LOW to LOW-Z[15]
5ns
tHZOE
OE HIGH to High-Z[15, 16]
18
ns
tLZCE
CE1 LOW and CE2 HIGH to Low-Z[15]
10
ns
tHZCE
CE1 HIGH and CE2 LOW to High-Z[15, 16]
18
ns
tPU
CE1 LOW and CE2 HIGH to Power Up
0
ns
tPD
CE1 HIGH and CE2 LOW to Power Down
45
ns
tDBE
BLE/BHE LOW to Data Valid
45
ns
tLZBE
BLE/BHE LOW to Low-Z[15, 17]
5ns
tHZBE
BLE/BHE HIGH to HIGH-Z[15, 16]
18
ns
Write Cycle[18]
tWC
Write Cycle Time
45
ns
tSCE
CE1 LOW and CE2 HIGH to Write End
35
ns
tAW
Address Setup to Write End
35
ns
tHA
Address Hold from Write End
0
ns
tSA
Address Setup to Write Start
0
ns
tPWE
WE Pulse Width
35
ns
tBW
BLE/BHE LOW to Write End
35
ns
tSD
Data Setup to Write End
25
ns
tHD
Data Hold from Write End
0
ns
tHZWE
WE LOW to High-Z[15, 16]
18
ns
tLZWE
WE HIGH to Low-Z[15]
10
ns
Notes
13. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less, timing reference levels of VCC(typ)/2, input pulse
levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” on page 5.
14. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. See application note AN13842 for further clarification.
15. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device.
16. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state.
17. If both byte enables are toggled together, this value is 10 ns.
18. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE, BLE or both = VIL, and CE2 = VIH. All signals must be active to initiate a
write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that
terminates the write.


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