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CY62148ELL-55SXI Datasheet(PDF) 10 Page - Cypress Semiconductor

Part # CY62148ELL-55SXI
Description  4-Mbit (512K x 8) Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62148ELL-55SXI Datasheet(HTML) 10 Page - Cypress Semiconductor

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CY62148E MoBL®
Document #: 38-05442 Rev. *F
Page 10 of 10
Document History Page
Document Title: CY62148E MoBL®, 4-Mbit (512K x 8) Static RAM
Document Number: 38-05442
REV.
ECN NO.
Issue
Date
Orig. of
Change
Description of Change
**
201580
01/08/04
AJU
New Data Sheet
*A
249276
See ECN
SYT
Changed from Advance Information to Preliminary
Moved Product Portfolio to Page 2
Added RTSOP II and Removed FBGA Package
Changed VCC stabilization time in footnote #7 from 100 µs to 200 µs
Changed ICCDR from 2.0 µA to 2.5 µA
Changed typo in Data Retention Characteristics(tR) from 100 µs to tRC ns
Changed tOHA from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bin
Changed tHZOE, tHZWE from 12 to 15 ns for 35 ns Speed Bin and 15 to 18 ns for 45
ns Speed Bin
Changed tSCE from 25 to 30 ns for 35 ns Speed Bin and 40 to 35 ns for 45 ns Speed
Bin
Changed tHZCE from 12 to18 ns for 35 ns Speed Bin and 15 to 22 ns for 45 ns
Speed Bin
Changed tSD from 15 to 18 ns for 35 ns Speed Bin and 20 to 22 ns for
45 ns Speed Bin
Changed tDOE from 15 to 18 ns for 35 ns Speed Bin
Corrected typo in Package Name
Changed Ordering Information to include Pb-Free Packages
*B
414820
See ECN
ZSD
Changed from Preliminary to Final
Changed the address of Cypress Semiconductor Corporation on Page #1 from
“3901 North First Street” to “198 Champion Court”
Removed 35ns Speed Bin
Removed “L” version of CY62148E
Changed ICC (Typ) value from 1.5 mA to 2 mA at f=1 MHz
Changed ICC (Max) value from 2 mA to 2.5 mA at f=1 MHz
Changed ICC (Typ) value from 12 mA to 15 mA at f=fmax
Removed ISB1 spec from the Electrical characteristics table
Changed ISB2 Typ values from 0.7 µA to 1 µA and Max values from 2.5 µA to 7 µA
Modified footnote #4 to include current limit
Removed redundant footnote on DNU pins
Changed the AC testload capacitance from 100 pF to 30 pF on page #4
Changed test load parameters R1, R2, RTH and VTH from 1838 Ω, 994 Ω,
645
Ω and 1.75V to 1800 Ω, 990 Ω, 639 Ω and 1.77V
Changed ICCDR from 2.5 µA to 7 µA
Added ICCDR typical value
Changed tLZOE from 3 ns to 5 ns
Changed tLZCE and tLZWE from 6 ns to 10 ns
Changed tHZCE from 22 ns to 18 ns
Changed tPWE from 30 ns to 35 ns
Changed tSD from 22 ns to 25 ns
Updated the ordering information table and replaced Package Name column with
Package Diagram
*C
464503
See ECN
NXR
Included Automotive Range in product offering
Updated the Ordering Information
*D
485639
See ECN
VKN
Corrected the operating range to 4.5V - 5.5V on page# 3
*E
833080
See ECN
VKN
Added footnote #8
Added VILspec for SOIC package
*F
890962
See ECN
VKN
Added Automotive-A part and its related information
Removed Automotive-E part and its related information
Added footnote #2 related to SOIC package
Added footnote #9 related to ISB2
Added AC values for 55 ns Industrial-SOIC range
Updated Ordering Information table
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