CY62147DV30
Document #: 38-05340 Rev. *F
Page 3 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground
Potential ......................................–0.3V to + VCC(MAX) + 0.3V
DC Voltage Applied to Outputs
in High-Z State[6,7]..........................–0.3V to VCC(MAX) + 0.3V
DC Input Voltage[6,7] ..................... –0.3V to VCC(MAX) + 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current...................................................... >200 mA
Operating Range
Device
Range
Ambient
Temperature
[TA]
[9]
VCC
CY62147DV30L
Automotive-E –40°C to +125°C
2.20V
to
3.60V
CY62147DV30LL
Industrial
–40°C to +85°C
Automotive-A –40°C to +85°C
Electrical Characteristics (Over the Operating Range)
Parameter Description
Test Conditions
–45
–55/–70
Unit
Min.
Typ.[5]
Max.
Min.
Typ.[5]
Max.
VOH
Output HIGH
Voltage
IOH = –0.1 mA
VCC = 2.20V
2.0
2.0
V
IOH = –1.0 mA
VCC = 2.70V
2.4
2.4
V
VOL
Output LOW
Voltage
IOL = 0.1 mA
VCC = 2.20V
0.4
0.4
V
IOL = 2.1 mA
VCC = 2.70V
0.4
0.4
V
VIH
Input HIGH
Voltage
VCC = 2.2V to 2.7V
1.8
VCC + 0.3V 1.8
VCC + 0.3V V
VCC= 2.7V to 3.6V
2.2
VCC + 0.3V 2.2
VCC + 0.3V V
VIL
Input LOW
Voltage
VCC = 2.2V to 2.7V
–0.3
0.6
–0.3
0.6
V
VCC= 2.7V to 3.6V
–0.3
0.8
–0.3
0.8
V
IIX
Input Leakage
Current
GND < VI < VCC
Ind’l
–1
+1
–1
+1
µA
Auto-A[9]
–1
+1
µA
Auto-E[9]
–4
+4
µA
IOZ
Output
Leakage
Current
GND < VO < VCC,
Output Disabled
Ind’l
–1
+1
–1
+1
µA
Auto-A[9]
–1
+1
µA
Auto-E[9]
–4
+4
µA
ICC
VCCOperating
Supply
Current
f = fMAX = 1/tRC
VCC = VCCmax
IOUT = 0 mA
CMOS levels
10
20
8
15
mA
f = 1 MHz
1.5
3
1.5
3
mA
ISB1
Automatic CE
Power-Down
Current —
CMOS Inputs
CE > VCC−0.2V,
VIN>VCC–0.2V, VIN<0.2V)
f = fMAX (Address and
Data Only),
f = 0 (OE, WE, BHE and
BLE), VCC = 3.60V
Ind’l
LL
8
8
µA
Auto-A[9] LL
8
Auto-E[9] L25
ISB2
Automatic CE
Power-Down
Current —
CMOS Inputs
CE > VCC – 0.2V,
VIN > VCC – 0.2V or
VIN < 0.2V,
f = 0, VCC = 3.60V
Ind’l
LL
8
8
µA
Auto-A[9] LL
8
Auto-E[9] L25
Notes:
6. VIL(min.) = –2.0V for pulse durations less than 20 ns.
7. VIH(max.) = VCC + 0.75V for pulse durations less than 20 ns.
8. Full device AC operation assumes a 100-
µs ramp time from 0 to V
CC(min) and 200-µs wait time after VCC stabilization.
9. Auto-A is available in –70 and Auto-E is available in –55.
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