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CY62146EV30LL-45ZSXI Datasheet(PDF) 9 Page - Cypress Semiconductor |
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CY62146EV30LL-45ZSXI Datasheet(HTML) 9 Page - Cypress Semiconductor |
9 / 12 page CY62146EV30 MoBL® Document Number: 38-05567 Rev. *H Page 9 of 18 Figure 7. Write Cycle No. 1 (WE Controlled) [22, 23, 24] Figure 8. Write Cycle No. 2 (CE Controlled) [22, 23, 24] Switching Waveforms (continued) tHD tSD tPWE tSA tHA tAW tWC tHZOE DATAIN NOTE 25 tBW tSCE DATA I/O ADDRESS CE WE OE BHE/BLE tHD tSD tPWE tHA tAW tSCE tWC tHZOE DATAIN tBW tSA CE ADDRESS WE DATA I/O OE BHE/BLE NOTE 25 Notes 22. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write. 23. Data I/O is high impedance if OE = VIH. 24. If CE goes HIGH simultaneously with WE = VIH, the output remains in a high impedance state. 25. During this period, the I/Os are in output state and input signals must not be applied. |
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