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CY62146EV30LL-45ZSXI Datasheet(PDF) 9 Page - Cypress Semiconductor

Part # CY62146EV30LL-45ZSXI
Description  4-Mbit (256K x 16) Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62146EV30LL-45ZSXI Datasheet(HTML) 9 Page - Cypress Semiconductor

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CY62146EV30 MoBL®
Document Number: 38-05567 Rev. *H
Page 9 of 18
Figure 7. Write Cycle No. 1 (WE Controlled) [22, 23, 24]
Figure 8. Write Cycle No. 2 (CE Controlled) [22, 23, 24]
Switching Waveforms (continued)
tHD
tSD
tPWE
tSA
tHA
tAW
tWC
tHZOE
DATAIN
NOTE 25
tBW
tSCE
DATA I/O
ADDRESS
CE
WE
OE
BHE/BLE
tHD
tSD
tPWE
tHA
tAW
tSCE
tWC
tHZOE
DATAIN
tBW
tSA
CE
ADDRESS
WE
DATA I/O
OE
BHE/BLE
NOTE 25
Notes
22. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals must be ACTIVE to initiate a write and any of these
signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.
23. Data I/O is high impedance if OE = VIH.
24. If CE goes HIGH simultaneously with WE = VIH, the output remains in a high impedance state.
25. During this period, the I/Os are in output state and input signals must not be applied.


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