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PM75RSE060 Datasheet(PDF) 9 Page - Mitsubishi Electric Semiconductor

Part # PM75RSE060
Description  FLAT-BASE TYPE INSULATED PACKAGE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PM75RSE060 Datasheet(HTML) 9 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RSE060
FLAT-BASE TYPE
INSULATED PACKAGE
Jul. 2005
2
1.5
2.5
1
0.5
0
18
13
12
15
14
17
16
IC = 30A
Tj = 25
°C
Tj = 125
°C
100
102
7
5
3
2
0
101
7
5
3
2
0.5
1
1.5
2
3
2.5
4
4
VD = 15V
Tj = 25
°C
Tj = 125
°C
CONTROL SUPPLY VOLTAGE VD (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS
(TYPICAL)
EMITTER-COLLECTOR VOLTAGE VEC (V)
DIODE FORWARD CHARACTERISTICS
(TYPICAL)
40
30
10
20
0
0
1
0.5
1.5
2.5
2
Tj = 25
°C
2
1.5
2.5
1
0.5
0
0
10
40
20
30
Tj = 25
°C
Tj = 125
°C
15V
13V
VD = 17V
VD = 15V
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
101
10–3
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–323 5 710–223 5 710–123 5 7100 23 5 7101
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT PART)
101
10–3
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–323 5 710–223 5 710–123 5 7100 23 5 7101
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART)
Single Pulse
Per unit base = Rth(j – c)Q = 0.71
°C/W
Single Pulse
Per unit base = Rth(j – c)F = 1.66
°C/W
PERFORMANCE CURVES (Brake Part)


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