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PM75RSD060 Datasheet(PDF) 8 Page - Mitsubishi Electric Semiconductor

Part # PM75RSD060
Description  FLAT-BASE TYPE INSULATED PACKAGE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PM75RSD060 Datasheet(HTML) 8 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RSD060
FLAT-BASE TYPE
INSULATED PACKAGE
Jul. 2005
10–2
100
7
5
3
2
25 7
102
101
10–1
7
5
3
2
103
4
4
100
102
7
5
3
2
101
7
5
3
2
4
4
4
32
3
5 7
4
Irr
VCC = 300V
VD = 15V
Tj = 25
°C
Tj = 125
°C
Inductive load
trr
DIODE REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
COLLECTOR RECOVERY CURRENT –IC (A)
101
10–3
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–323 5 710–223 5 710–123 5 7100 23 5 7101
0
20
40
60
80
100
25
0
510
15
20
N-side
P-side
VD = 15V
Tj = 25
°C
CARRIER FREQUENCY fc (kHz)
ID VS. fc CHARACTERISTICS
(TYPICAL)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT PART)
101
10–3
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–323 5 710–223 5 710–123 5 7100 23 5 7101
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART)
Single Pulse
Per unit base = Rth(j – c)Q = 0.49
°C/W
Single Pulse
Per unit base = Rth(j – c)F = 1.38
°C/W
100
102
7
5
3
2
0
101
7
5
3
2
0.5
1
1.5
2
2.5
4
4
VD = 15V
Tj = 25
°C
Tj = 125
°C
EMITTER-COLLECTOR VOLTAGE VEC (V)
DIODE FORWARD CHARACTERISTICS
(TYPICAL)


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