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CY7C1410AV18-167BZXC Datasheet(PDF) 8 Page - Cypress Semiconductor

Part # CY7C1410AV18-167BZXC
Description  36-Mbit QDR-II??SRAM 2-Word Burst Architecture
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1410AV18-167BZXC Datasheet(HTML) 8 Page - Cypress Semiconductor

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CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
Document #: 38-05615 Rev. *D
Page 8 of 25
Read Operations
The CY7C1412AV18 is organized internally as 2 arrays of
1Mx18. Accesses are completed in a burst of two sequential
18-bit data words. Read operations are initiated by asserting
RPS active at the rising edge of the Positive Input Clock (K).
The address is latched on the rising edge of the K Clock. The
address presented to Address inputs is stored in the Read
address register. Following the next K clock rise the corre-
sponding lowest order 18-bit word of data is driven onto the
Q[17:0] using C as the output timing reference. On the subse-
quent rising edge of C, the next 18-bit data word is driven onto
the Q[17:0]. The requested data is valid 0.45 ns from the rising
edge of the output clock (C and C or K and K when in single
clock mode).
Synchronous internal circuitry automatically tri-states the
outputs following the next rising edge of the Output Clocks
(C/C). This allows for a seamless transition between devices
without the insertion of wait states in a depth expanded
memory.
Write Operations
Write operations are initiated by asserting WPS active at the
rising edge of the Positive Input Clock (K). On the same K
clock rise, the data presented to D[17:0] is latched and stored
into the lower 18-bit Write Data register provided BWS[1:0] are
both asserted active. On the subsequent rising edge of the
Negative Input Clock (K), the address is latched and the infor-
mation presented to D[17:0] is stored into the Write Data
register provided BWS[1:0] are both asserted active. The 36
bits of data are then written into the memory array at the
specified location. When deselected, the write port ignores all
inputs after the pending Write operations have been
completed.
Byte Write Operations
Byte Write operations are supported by the CY7C1412AV18.
A Write operation is initiated as described in the Write Opera-
tions section above. The bytes that are written are determined
by BWS0 and BWS1, which are sampled with each 18-bit data
word. Asserting the appropriate Byte Write Select input during
the data portion of a Write allows the data being presented to
be latched and written into the device. Deasserting the Byte
Write Select input during the data portion of a write allows the
data stored in the device for that byte to remain unaltered. This
feature can be used to simplify Read/Modify/Write operations
to a Byte Write operation.
Single Clock Mode
The CY7C1412AV18 can be used with a single clock that
controls both the input and output registers. In this mode, the
device recognizes only a single pair of input clocks (K and K)
that control both the input and output registers. This operation
is identical to the operation if the device had zero skew
between the K/K and C/C clocks. All timing parameters remain
the same in this mode. To use this mode of operation, the user
must tie C and C HIGH at power on. This function is a strap
option and not alterable during device operation.
Concurrent Transactions
The Read and Write ports on the CY7C1412AV18 operate
completely independently of one another. While each port
latches the address inputs on different clock edges, the user
can Read or Write to any location, regardless of the trans-
action on the other port. Also, reads and writes can be started
in the same clock cycle. If the ports access the same location
at the same time, the SRAM delivers the most recent infor-
mation associated with the specified address location. This
includes forwarding data from a Write cycle that was initiated
on the previous K clock rise.
Depth Expansion
The CY7C1412AV18 has a Port Select input for each port.
This allows for easy depth expansion. Both Port Selects are
sampled on the rising edge of the Positive Input Clock only (K).
Each port select input can deselect the specified port.
Deselecting a port does not affect the other port. All pending
transactions (Read and Write) are completed prior to the
device being deselected.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ
pin on the SRAM and VSS to allow the SRAM to adjust its
output driver impedance. The value of RQ must be 5x the
value of the intended line impedance driven by the SRAM. The
allowable range of RQ to guarantee impedance matching with
a tolerance of ±15% is between 175
Ω and 350Ω, with
VDDQ = 1.5V.The output impedance is adjusted every 1024
cycles upon power up to account for drifts in supply voltage
and temperature.
Echo Clocks
Echo clocks are provided on the QDR-II to simplify data
capture on high-speed systems. Two echo clocks are
generated by the QDR-II. CQ is referenced with respect to C
and CQ is referenced with respect to C. These are
free-running clocks and are synchronized to the output clock
(C/C) of the QDR-II. In the single clock mode, CQ is generated
with respect to K and CQ is generated with respect to K. The
timings for the echo clocks are shown in the AC Timing table.
DLL
These chips use a Delay Lock Loop (DLL) that is designed to
function between 80 MHz and the specified maximum clock
frequency. During power up, when the DOFF is tied HIGH, the
DLL gets locked after 1024 cycles of stable clock. The DLL can
also be reset by slowing or stopping the input clock K and K
for a minimum of 30 ns. However, it is not necessary for the
DLL to be specifically reset in order to lock the DLL to the
desired frequency. The DLL automatically locks 1024 clock
cycles after a stable clock is presented.the DLL may be
disabled by applying ground to the DOFF pin. For information
refer to the application note “DLL Considerations in
QDRII/DDRII/QDRII+/DDRII+”.


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