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CY7C1399BN Datasheet(PDF) 4 Page - Cypress Semiconductor

Part No. CY7C1399BN
Description  256K (32K x 8) Static RAM
Download  8 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1399BN Datasheet(HTML) 4 Page - Cypress Semiconductor

  CY7C1399BN Datasheet HTML 1Page - Cypress Semiconductor CY7C1399BN Datasheet HTML 2Page - Cypress Semiconductor CY7C1399BN Datasheet HTML 3Page - Cypress Semiconductor CY7C1399BN Datasheet HTML 4Page - Cypress Semiconductor CY7C1399BN Datasheet HTML 5Page - Cypress Semiconductor CY7C1399BN Datasheet HTML 6Page - Cypress Semiconductor CY7C1399BN Datasheet HTML 7Page - Cypress Semiconductor CY7C1399BN Datasheet HTML 8Page - Cypress Semiconductor  
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CY7C1399BN
Document #: 001-06490 Rev. *A
Page 4 of 8
Data Retention Characteristics (Over the Operating Range - L version only)
Parameter
Description
Conditions
Min.
Max.
Unit
VDR
VCC for Data Retention
2.0
V
ICCDR
Data Retention Current
VCC = VDR = 2.0V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V or
VIN < 0.3V
0
20
µA
tCDR
Chip Deselect to Data
Retention Time
0
ns
tR
Operation Recovery Time
tRC
ns
Data Retention Waveform
3.0V
3.0V
tCDR
VDR > 2V
DATA RETENTION MODE
tR
CE
VCC
Switching Waveforms
Read Cycle No. 1[10, 11]
Read Cycle No. 2[11, 12]
Notes:
10. Device is continuously selected. OE, CE = VIL.
11. WE is HIGH for read cycle.
12. Address valid prior to or coincident with CE transition LOW.
ADDRESS
DATA OUT
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
DATA OUT
HIGH IMPEDANCE
IMPEDANCE
ICC
ISB
tHZOE
tHZCE
tPD
OE
CE
HIGH
VCC
SUPPLY
CURRENT
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