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FSS273 Datasheet(PDF) 1 Page - Sanyo Semicon Device

Part No. FSS273
Description  N-Channel Silicon MOSFET General-Purpose Switching Device
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Maker  SANYO [Sanyo Semicon Device]
Homepage  http://www.ssdc-jp.com/eng/
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FSS273 Datasheet(HTML) 1 Page - Sanyo Semicon Device

   
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FSS273
No. A0329-1/4
Features
Motor drive applications.
Inverter drive applications.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
45
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
8A
Drain Current (PW
≤10s)
ID
Duty cycle
≤1%
8.5
A
Drain Current (PW
≤10µs)
IDP
Duty cycle
≤1%
32
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (1200mm2!0.8mm), PW
≤10s
2.4
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
45
V
Zero-Gate Voltage Drain Current
IDSS
VDS=45V, VGS=0V
1
µA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
µA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=8A
6
10
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=8A, VGS=10V
16
22
m
RDS(on)2
ID=4A, VGS=4V
24
34
m
Input Capacitance
Ciss
VDS=20V, f=1MHz
2225
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
260
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
190
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
27
ns
Rise Time
tr
See specified Test Circuit.
55
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
150
ns
Fall Time
tf
See specified Test Circuit.
80
ns
Marking : S273
Continued on next page.
Ordering number : ENA0329
80906 / 22006PA MS IM TB-00002037
FSS273
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN


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