Electronic Components Datasheet Search |
|
P4C198AL-10LMB Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation |
|
P4C198AL-10LMB Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation |
3 / 13 page P4C198/198L, P4C198A/198AL Page 3 of 13 Document # SRAM113 REV A DATA RETENTION CHARACTERISTICS (P4C198L/P4C198AL Military Temperature Only) Typ.* Max Symbol Parameter Test Condition Min V CC=VCC= Unit 2.0V 3.0V 2.0V 3.0V V DR V CC for Data Retention 2.0 V I CCDR Data Retention Current 10 15 600 900 µA t CDR Chip Deselect to CE ≥V CC – 0.2V, 0 ns Data Retention Time V IN ≥ VCC – 0.2V or t R † Operation Recovery Time t RC § ns *T A = +25°C §t RC = Read Cycle Time †This parameter is guaranteed but not tested. *V CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. 198: CE = V IL, OE = VIH 198A: CE 1 = VIL, CE2 = VIL. OE = VIH V IN ≤ 0.2V DATA RETENTION WAVEFORM I CC Symbol Parameter Temperature Range Dynamic Operating Current* Commercial Industrial Military –10 N/A –12 –15 –20 –25 –35 –45 Unit N/A mA mA mA POWER DISSIPATION CHARACTERISTICS VS. SPEED N/A 150 155 160 170 180 N/A 170 160 155 150 145 180 170 160 155 150 N/A N/A |
Similar Part No. - P4C198AL-10LMB |
|
Similar Description - P4C198AL-10LMB |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |