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2SK3823 Datasheet(PDF) 1 Page - Sanyo Semicon Device

Part No. 2SK3823
Description  N-Channel Silicon MOSFET General-Purpose Switching Device
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Maker  SANYO [Sanyo Semicon Device]
Homepage  http://www.ssdc-jp.com/eng/
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2SK3823 Datasheet(HTML) 1 Page - Sanyo Semicon Device

   
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2SK3823
No.8241-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8241
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
31005QA TS IM TB-00001199
2SK3823
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
40
A
Drain Current (Pulse)
IDP
PW
≤10µs, duty cycle≤1%
160
A
Allowable Power Dissipation
PD
1.75
W
Tc=25
°C45
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
56
mJ
Avalanche Current *2
IAV
40
A
Note : *1 VDD=20V, L=50µH, IAV=40A
*2 L
≤50µH, Single pulse
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0
1
µA
Gate-to-Source Leakage Current
IGSS
VGS= ±16V, VDS=0
±10
µA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=20A
16
28
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=20A, VGS=10V
21
27.5
m
RDS(on)2
ID=20A, VGS=4V
29
41
m
Marking : K3823
Continued on next page.


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