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P4C1256L-25JMBLF Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation |
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P4C1256L-25JMBLF Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation |
3 / 17 page P4C1256 Page 3 of 17 Document # SRAM119 REV G *V CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH. I CC Symbol Parameter Temperature Range Dynamic Operating Current* Commercial Industrial Military N/A N/A –15 N/A –12 –20 –25 –35 –45 –55 –70 Unit N/A mA mA mA POWER DISSIPATION CHARACTERISTICS VS. SPEED N/A N/A N/A N/A 170 160 170 155 165 170 150 145 160 155 150 150 150 155 160 165 DATA RETENTION CHARACTERISTICS (P4C1256L Military Temperature Only) Symbol V DR I CCDR t CDR t R † Parameter V CC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Test Conditons CE ≥ V CC –0.2V, V IN ≥ VCC –0.2V or V IN ≤ 0.2V Min 2.0 0 t RC § Typ.* V CC = 2.0V 3.0V Max V CC = 2.0V 3.0V Unit 10 15 100 200 V µA ns ns *T A = +25°C §t RC = Read Cycle Time † This parameter is guaranteed but not tested. DATA RETENTION WAVEFORM |
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