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MIG400Q2CMB1X Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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MIG400Q2CMB1X Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
5 / 9 page MIG400Q2CMB1X 2004-10-01 5/9 2. Control stage (Tj = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit High side ID (H) ⎯ 13 17 Control circuit current Low side ID (L) VD = 15 V ⎯ 13 17 mA Input on signal voltage VIN (on) 1.4 1.6 1.8 Input off signal voltage VIN (off) VD = 15 V 2.2 2.5 2.8 V Protection IFO (on) 8 10 12 Fault output current Normal IFO (off) VD = 15 V ⎯ ⎯ 0.1 mA Overcurrent protection trip level OC VD = 15 V, Tj < = 125°C 640 ⎯ ⎯ A Short-circuit protection trip level SC VD = 15 V, Tj < = 125°C 640 ⎯ ⎯ A Overcurrent cut-off time toff (OC) VD = 15 V ⎯ 5 ⎯ µs Trip level OT 110 118 125 Overtemperature protection Reset level OTr Case temperature ⎯ 98 ⎯ °C Trip level UV 11.0 12.0 12.5 Control supply under voltage protection Reset level UVr ⎯ 12.0 12.5 13.0 V Fault output pulse width tFO VD = 15 V 1 2 3 ms 3. Thermal resistance (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit IGBT ⎯ ⎯ 0.033 Junction to case thermal resistance Rth (j-c) FRD ⎯ ⎯ 0.068 °C/W Case to fin thermal resistance Rth (c-f) Compound is applied ⎯ 0.013 ⎯ °C/W |
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