CY7C1351G
Document #: 38-05513 Rev. *D
Page 7 of 14
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VDD Relative to GND........ –0.5V to +4.6V
Supply Voltage on VDDQ Relative to GND ...... –0.5V to +VDD
DC Voltage Applied to Outputs
in tri-state ............................................ –0.5V to VDDQ + 0.5V
DC Input Voltage ................................... –0.5V to VDD + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Ambient
Temperature (TA)VDD
VDDQ
Commercial
0°C to +70°C
3.3V –5%/+10% 2.5V –5%
to VDD
Industrial
−40°C to +85°C
Electrical Characteristics Over the Operating Range [10,11]
Parameter
Description
Test Conditions
Min.
Max.
Unit
VDD
Power Supply Voltage
3.135
3.6
V
VDDQ
I/O Supply Voltage
for 3.3V I/O
3.135
VDD
V
for 2.5V I/O
2.375
2.625
V
VOH
Output HIGH Voltage
for 3.3V I/O, IOH = -4.0 mA
2.4
V
for 2.5V I/O, IOH = -1.0 mA
2.0
V
VOL
Output LOW Voltage
for 3.3V I/O, IOL= 8.0 mA
0.4
V
for 2.5V I/O, IOL= 1.0 mA
0.4
V
VIH
Input HIGH Voltage
for 3.3V I/O
2.0
VDD + 0.3V V
Input HIGH Voltage
for 2.5V I/O
1.7
VDD + 0.3V
V
VIL
Input LOW Voltage[10]
for 3.3V I/O
–0.3
0.8
V
Input LOW Voltage[10]
for 2.5V I/O
–0.3
0.7
V
IX
Input Leakage Current
except ZZ and MODE
GND < VI < VDDQ
−55
µA
Input Current of MODE
Input = VSS
–30
µA
Input = VDD
5
µA
Input Current of ZZ
Input = VSS
–5
µA
Input = VDD
30
µA
IOZ
Output Leakage Current
GND < VI < VDDQ, Output Disabled
–5
5
µA
IDD
VDD Operating Supply
Current
VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
7.5-ns cycle, 133 MHz
225
mA
10-ns cycle, 100 MHz
205
mA
ISB1
Automatic CE Power-down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN > VIH or VIN ≤ VIL, f = fMAX,
inputs switching
7.5-ns cycle, 133 MHz
90
mA
10-ns cycle, 100 MHz
80
mA
ISB2
Automatic CE Power-down
Current—CMOS Inputs
VDD = Max, Device Deselected,
VIN > VDD – 0.3V or VIN < 0.3V,
f = 0, inputs static
All speeds
40
mA
ISB3
Automatic CE Power-down
Current—CMOS Inputs
VDD = Max, Device Deselected,
VIN > VDDQ – 0.3V or VIN < 0.3V,
f = fMAX, inputs switching
7.5-ns cycle, 133 MHz
75
mA
10-ns cycle, 100 MHz
65
mA
ISB4
Automatic CE Power-down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN > VIH or V IN < VIL, f = 0,
inputs static
All speeds
45
mA
Notes:
10. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> –2V (Pulse width less than tCYC/2).
11. TPower-up: Assumes a linear ramp from 0V to VDD (min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
[+] Feedback
[+] Feedback
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
