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P4C188L-10DMB Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation |
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P4C188L-10DMB Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation |
3 / 12 page P4C188/188L Page 3 of 12 Document # SRAM112 REV A *V CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL DATA RETENTION CHARACTERISTICS (P4C188L Military Temperature Only) Symbol V DR I CCDR t CDR t R † Parameter V CC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Test Conditions CE ≥ V CC –0.2V, V IN ≥ VCC –0.2V or V IN ≤ 0.2V Min 2.0 0 t RC § Typ.* V CC = 2.0V 3.0V 10 15 Max V CC = 2.0V 3.0V 600 900 Unit V µA ns ns DATA RETENTION WAVEFORM *T A = +125°C § t RC = Read Cycle Time † This parameter is guaranteed but not tested. I CC Symbol Parameter Temperature Range Dynamic Operating Current* Commercial Industrial Military –10 N/A –12 –15 –20 –25 –35 –45 Unit N/A mA mA mA POWER DISSIPATION CHARACTERISTICS VS. SPEED N/A 150 155 160 170 180 N/A 170 160 155 150 145 180 170 160 155 150 N/A N/A |
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