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CPH5612 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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CPH5612 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 4 page CPH5612 No.8180-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Total Gate Charge Qg VDS=50V, VGS=4V, ID=1A 4.4 nC Gate-to-Source Charge Qgs VDS=50V, VGS=4V, ID=1A 1.2 nC Gate-to-Drain “Miller” Charge Qgd VDS=50V, VGS=4V, ID=1A 0.8 nC Diode Forward Voltage VSD IS=1A, VGS=0 0.82 1.2 V Package Dimensions Electrical Connection unit : mm 2168 Switching Time Test Circuit 0.5 1.5 1.0 2.0 2.5 3.0 0 0 0.2 0.6 0.3 0.4 0.8 0.9 0.7 0.5 0.3 0.1 1.0 0 0.9 1.0 0.6 0.7 0.8 0.5 0.4 0.2 0.1 ID -- VDS IT08335 0 0.5 1.0 1.5 2.0 ID -- VGS IT08336 VDS=10V 1.5 V VGS=1.0V Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V 1 : Drain1 2 : Drain2 3 : Gate2 4 : Source 5 : Gate1 SANYO : CPH5 2.9 0.05 0.4 0.95 0.15 0.4 12 3 4 5 PW=10 µs D.C. ≤1% P.G 50 Ω G S D ID=0.5A RL=100Ω VDD=50V VOUT CPH5612 VIN 4V 0V VIN 543 12 1 : Drain1 2 : Drain2 3 : Gate2 4 : Source 5 : Gate1 Top view |
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