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P4C198-10DM Datasheet(PDF) 5 Page - Pyramid Semiconductor Corporation |
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P4C198-10DM Datasheet(HTML) 5 Page - Pyramid Semiconductor Corporation |
5 / 13 page P4C198/198L, P4C198A/198AL Page 5 of 13 Document # SRAM113 REV A READ CYCLE NO. 2 (ADDRESS Controlled)(5,6) READ CYCLE NO. 3 (CE CE CE CE CE(12) Controlled)(5,7,8) 10. Read Cycle Time is measured from the last valid address to the first transitioning address. 11. Transitions caused by a chip enable control have similar delays irrespective of whether CE 1 or CE2 causes them (P4C198A/L). 12. CE 1, CE2 for P4C198A/L. Notes: 6. CE (CE 1 CE2 for P4C198A/L) and OE are LOW READ cycle. 7. OE is LOW for the cycle. 8. ADDRESS must be valid prior to, or coincident with CE (CE 1 and CE 2 for P4C198A/L) transition LOW. 9. Transition is measured ± 200mV from steady state voltage prior to change, with loading as specified in Figure 1. |
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