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P4C1298-15CM Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation |
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P4C1298-15CM Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation |
3 / 11 page P4C1298/L Page 3 of 11 Document # SRAM135 REV OR *V CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = V IL DATA RETENTION CHARACTERISTICS (P4C1298L ONLY) Symbol V DR I CCDR t CDR t R † Parameter V CC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Test Conditions CE ≥ V CC –0.2V, V IN ≥ VCC –0.2V or V IN ≤ 0.2V Min 2.0 0 t RC § Typ.* V CC = 2.0V 3.0V 10 15 Max V CC = 2.0V 3.0V 1000 2000 Unit V µA ns ns DATA RETENTION WAVEFORM *T A = +25°C §t RC = Read Cycle Time † This parameter is guaranteed but not tested. I CC Symbol Parameter Temperature Range Dynamic Operating Current* Commercial Industrial –15 –20 –25 –35 Unit mA mA POWER DISSIPATION CHARACTERISTICS VS. SPEED 115 120 135 160 160 125 115 110 Military mA 120 120 150 160 |
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