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P4C1298-15CM Datasheet(PDF) 6 Page - Pyramid Semiconductor Corporation

Part # P4C1298-15CM
Description  ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
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Manufacturer  PYRAMID [Pyramid Semiconductor Corporation]
Direct Link  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C1298-15CM Datasheet(HTML) 6 Page - Pyramid Semiconductor Corporation

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P4C1298/L
Page 6 of 11
Document # SRAM135 REV OR
12. Write Cycle Time is measured from the last valid address to the first
transition address.
13. Transition is measured ±200mV from steady state voltage prior to
change with specified loading in Figure 1. This parameter is
sampled and not 100% tested.
Notes:
9.
CE and WE must be LOW for WRITE cycle.
10.
OE is LOW for this WRITE cycle.
11. If
CE goes HIGH simultaneously with WE HIGH, the output remains
in a high impedance state.
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (
WE
WE
WE
WE
WE CONTROLLED) (9)
AC CHARACTERISTICS - WRITE CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
Min
Max
MinMax
MinMax
MinMax
MinMax
tWC
Write Cycle Time
15
20
25
35
45
tCW
Chip Enable Time to End of Write
10
15
20
25
30
tAW
Address Valid to End of Write
10
15
20
25
30
tAS
Address Set-up Time
000
00
tWP
Write Pulse Width
10
15
20
25
30
tAH
Address Hold Time from End of Write
0
0
0
0
0
tDW
Data Valid to End of Write
9
10
15
20
20
tDH
Data Hold Time
000
00
tWZ
Write Enable to Output in High Z
7
10
15
20
20
tOW
Output Active from End of Write
0
0
0
0
0
Sym
Parameter
-45
-15
-20
-25
-35


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