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2SK3818 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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2SK3818 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page 2SK3818 No.8056-1/4 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN8056 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. D2404QA TS IM TB-00000613 2SK3818 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC converter. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 74 A Drain Current (Pulse) IDP PW ≤10µs, duty cycle≤1% 296 A Allowable Power Dissipation PD 1.65 W Tc=25 °C75 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Enargy (Single Pulse) *1 EAS 410 mJ Avalanche Current *2 IAV 74 A Note : *1 VDD=20V, L=100µH, IAV=74A *2 L ≤100µH, single pulse Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 60 V Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0 1 µA Gate-to-Source Leakage Current IGSS VGS= ±16V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS=10V, ID=37A 27 45 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=37A, VGS=10V 10 13 m Ω RDS(on)2 ID=37A, VGS=4V 13 18 m Ω Marking : K3818 Continued on next page. |
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