P4C1026-35L28I datasheet(3/10 Pages) PYRAMID

Part #	P4C1026-35L28I

Description	ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM

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Manufacturer	PYRAMID [Pyramid Semiconductor Corporation]

Direct Link	http://www.pyramidsemiconductor.com

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3 / 10 page

P4C1026

Page 3 of10

Document # SRAM127 REV E

*V

CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL

DATA RETENTION CHARACTERISTICS

Symbol

V

DR

I

CCDR

t

CDR

t

R

†

Parameter

V

CC for Data Retention

Data Retention Current

Chip Deselect to

Data Retention Time

Operation Recovery Time

Test Conditions

CE

≥ V

CC –0.2V,

V

IN ≥ VCC –0.2V or

V

IN ≤ 0.2V

Min

2.0

0

t

RC

§

Typ.*

V

CC =

2.0V

3.0V

10

15

Max

V

CC =

2.0V

3.0V

250

500

Unit

V

µA

ns

DATA RETENTION WAVEFORM

*T

A = +125°C

§

t

RC = Read Cycle Time

†

This parameter is guaranteed but not tested.

I

CC

Symbol

Parameter

Temperature

Range

Dynamic Operating Current*

Commercial

Industrial

–15

–20

–25

–35

Unit

mA

POWER DISSIPATION CHARACTERISTICS VS. SPEED

80

90

80

75

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