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P4C174-25JMB Datasheet(PDF) 6 Page - Pyramid Semiconductor Corporation |
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P4C174-25JMB Datasheet(HTML) 6 Page - Pyramid Semiconductor Corporation |
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6 / 12 page  P4C174 Page 6 of 12 Document # SRAM118 REV C Parameter Symbol Max Max Max Max Max Max Min Min Min Min Min Min t WC t CW t AS t AW Write Cycle Time Chip Enable LOW to End of Write Address Valid to Beginning of Write Address Valid to End of Write t DW t WP t AH Data Valid to End of Write Unit ns ns ns ns ns ns –25 –20 –15 –12 –10 –8 End of Write to Address Change Write Pulse Width End of Write to Data Change t DH Write Enable HIGH to Output LOW-Z (1) t OW Write Enable LOW to Output HIGH-Z (1) t WZ 8 7 0 7 0 7 6 0 0 4 10 9 0 9 0 9 6 0 0 4 12 10 0 10 0 10 6 0 0 AC CHARACTERISTICS - WRITE CYCLE (V CC = 5V ± 10%, 0°C to +70°C) 4 15 12 0 12 0 12 7 0 0 5 20 15 0 15 0 15 10 0 0 7 20 15 0 15 0 15 10 0 0 7 ns ns ns ns WRITE CYCLE NO. 1 (WE WE WE WE WE CONTROLLED)(6) WRITE CYCLE NO. 2 (CE CE CE CE CE CONTROLLED)(6) |
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