Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

P4C422-35LC Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation

Part # P4C422-35LC
Description  HIGH SPEED 256 x 4 STATIC CMOS RAM
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  PYRAMID [Pyramid Semiconductor Corporation]
Direct Link  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C422-35LC Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation

  P4C422-35LC Datasheet HTML 1Page - Pyramid Semiconductor Corporation P4C422-35LC Datasheet HTML 2Page - Pyramid Semiconductor Corporation P4C422-35LC Datasheet HTML 3Page - Pyramid Semiconductor Corporation P4C422-35LC Datasheet HTML 4Page - Pyramid Semiconductor Corporation P4C422-35LC Datasheet HTML 5Page - Pyramid Semiconductor Corporation P4C422-35LC Datasheet HTML 6Page - Pyramid Semiconductor Corporation P4C422-35LC Datasheet HTML 7Page - Pyramid Semiconductor Corporation P4C422-35LC Datasheet HTML 8Page - Pyramid Semiconductor Corporation P4C422-35LC Datasheet HTML 9Page - Pyramid Semiconductor Corporation Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 10 page
background image
P4C422
Page 3 of 10
Document # SRAM101 REV. A
Mode
CS
2
CS
CS
CS
CS
CS
1
WE
WE
WE
WE
WE
OE
OE
OE
OE
OE
Output
Standby
L
X
X
X
High Z
Standby
X
H
X
X
High Z
D
OUT Disabled
H
L
X
H
High Z
Read
H
L
H
L
D
OUT
Write
H
L
L
X
High Z
recovery times by eliminating the “write recovery glitch.”
Reading is performed with chip selct one (CS
1) LOW, chip
select two (CS
2) HIGH, write enable
(WE) HIGH and
output enable (OE) LOW. The information stored in the
addressed word is read out on the noninverting outputs
(O
0 through O3). The outputs of the memory go to an
inactive high impedance state whenever chip select one
(CS
1) is HIGH, or during the write operation when write
enable (WE) is LOW.
An active LOW write enable (WE) controls the writing/
reading operation of the memory. When the chip select
one (CS
1) and the write enable (WE) are LOW and the chip
select two (CS
2) is HIGH, the information on data inputs
(D
0 through D3) is written into the addressed memory word
and preconditions the output circuitry so that true data is
present at the outputs when the write cycle is complete.
This preconditioning operation insures minimum write
FUNCTIONAL DESCRIPTION
TRUTH TABLE
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC = 5V ± 10% except as noted, All Temperature Ranges)
(2)
TIMING WAVEFORM OF READ CYCLE
Notes:
H
= HIGH
L
= Low
X
= Don't Care
HIGH Z = Implies outputs are disabled or off. This condition
is defined as high impedance state for the
P4C422.
Sym.
t
RC
t
ACS
t
ZRCS
t
AOS
t
ZROS
t
AA
Read Cycle Time (5)
Chip Select Time (5)
Chip Select to High-Z (6)
Output Enable Time
Output Enable to High-Z (6)
Address Access Time (5)
-10*
Min Max
7.5
8
7.5
8
10
-12
Min
12
Max
8
10
8
10
12
-15
Min
15
Max
8
12
8
12
15
-20
Min
20
Max
12
15
12
15
20
-25
Min
25
Max
15
20
15
20
-35
Min
35
Max
Unit
ns
ns
ns
ns
ns
ns
25
*V
CC = 5V ± 5%
25
30
25
30
35
Parameter
12


Similar Part No. - P4C422-35LC

ManufacturerPart #DatasheetDescription
logo
List of Unclassifed Man...
P4C422 ETC1-P4C422 Datasheet
65Kb / 6P
   ULTRA HIGH SPEED 256 X 4 STATIC CMOS RAM
More results

Similar Description - P4C422-35LC

ManufacturerPart #DatasheetDescription
logo
Pyramid Semiconductor C...
P4C423 PYRAMID-P4C423 Datasheet
172Kb / 8P
   HIGH SPEED 256 x 4 STATIC CMOS RAM
P93U422 PYRAMID-P93U422 Datasheet
217Kb / 10P
   HIGH SPEED 256 x 4 STATIC CMOS RAM
logo
List of Unclassifed Man...
P4C422 ETC1-P4C422 Datasheet
65Kb / 6P
   ULTRA HIGH SPEED 256 X 4 STATIC CMOS RAM
PDM31564 ETC1-PDM31564 Datasheet
286Kb / 9P
   256 X 16 CMOS 3.3V STATIC RAM
logo
Pyramid Semiconductor C...
P4C1299 PYRAMID-P4C1299 Datasheet
904Kb / 11P
   ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
P4C1258 PYRAMID-P4C1258 Datasheet
174Kb / 9P
   ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
P4C1298 PYRAMID-P4C1298 Datasheet
124Kb / 11P
   ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
P4C1026 PYRAMID-P4C1026 Datasheet
290Kb / 10P
   ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM
logo
Harris Corporation
HM-6501 HARRIS-HM-6501 Datasheet
275Kb / 6P
   256 x 4 CMOS RAM
logo
Intersil Corporation
HM-6551 INTERSIL-HM-6551 Datasheet
116Kb / 9P
   256 x 4 CMOS RAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com