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P4C164-15CWMLF Datasheet(PDF) 4 Page - Pyramid Semiconductor Corporation

Part # P4C164-15CWMLF
Description  ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS
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Manufacturer  PYRAMID [Pyramid Semiconductor Corporation]
Direct Link  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C164-15CWMLF Datasheet(HTML) 4 Page - Pyramid Semiconductor Corporation

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P4C164
Page 4 of 16
Document # SRAM115 REV F
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
Notes:
5.
WE is HIGH for READ cycle.
6.
CE
1 is LOW, CE2 is HIGH and OE is LOW for READ cycle.
7. ADDRESS must be valid prior to, or coincident with
CE
1 transition
LOW and CE
2 transition HIGH.
8. Transition is measured ± 200 mV from steady state voltage prior to
change, with loading as specified in Figure 1. This parameter is
sampled and not 100% tested.
TIMING WAVEFORM OF READ CYCLE NO. 1 (
OE
OE
OE
OE
OE CONTROLLED)(5)
Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max
tRC
Read Cycle
Time
8
1012152025
35
4570
100
ns
tAA
Address
Access Time
8
10
12
152025354570
100
ns
tAC
Chip Enable
Access Time
8
10
12
152025354570
100
ns
tOH
Output Hold
from Address
Change
333333333
3
ns
tLZ
Chip Enable to
Output in Low Z
222222222
2
ns
tHZ
Chip Disable
to Output in
High Z
5678
8
10
15
20
35
45
ns
tOE
Output Enable
Low to Data
Valid
5679
10
13
18
20
35
45
ns
tOLZ
Output Enable
Low to Low Z
222222222
2
ns
tOHZ
Output Enable
High to High Z
5679
9
12
15
20
35
45
ns
tPU
Chip Enable to
Power Up
Time
000000000
0
ns
tPD
Chip Disable
to Power Down
Time
8
10
12
15202020253545
ns
Symbol
Parameter
-8
-10
-12
-15
-20
-25
Unit
-35
-45
-70
-100


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