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P4C1023 Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation

Part No. P4C1023
Description  LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM
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Maker  PYRAMID [Pyramid Semiconductor Corporation]
Homepage  http://www.pyramidsemiconductor.com
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P4C1023 Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation

 
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P4C1023/P4C1023L
Page 3 of 11
Document # SRAM126 REV OR
Note 1 - Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e., CE
2 VIH (min), CE1 and WE VIL (max), OE is high. Switching
inputs are 0V and 3V.
CAPACITANCES(4)
(V
CC = 5.0V, TA = 25°C, f = 1.0 MHz)
POWER DISSIPATION CHARACTERISTICS VS. SPEED
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Symbol
Parameter
Test Conditions
Max
Unit
C
IN
C
OUT
Input Capacitance
Output Capacitance
V
IN = 0V
V
OUT = 0V
7
9
pF
pF
Symbol
Parameter
Unit
Dynamic Operating Current
Commercial
Industrial
Military
20
25
35
20
25
35
mA
-55
-70
Temperature
Range
Symbol
Parameter
-55
Min
Max
-70
Min
Max
Unit
t
RC
55
ns
t
AA
Address Access Time
55
70
ns
t
AC
Chip Enable Access
Time
55
70
ns
t
OH
Output Hold from
Address Change
55
ns
t
LZ
Chip Enable to
Output in Low Z
10
10
ns
t
HZ
Chip Disable to
Output in High Z
20
25
ns
t
OE
Output Enable Low
to Data Valid
30
35
ns
t
OLZ
Output Enable Low to
Low Z
55
ns
t
OHZ
Output Enable High
to High Z
20
25
ns
t
PU
Chip Enable to Power
Up Time
00
ns
t
PD
Chip Disable to
Power Down Time
55
70
ns
Read Cycle Time
70
Note 1
I
CC


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