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P4C174-12CC Datasheet(PDF) 4 Page - Pyramid Semiconductor Corporation |
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P4C174-12CC Datasheet(HTML) 4 Page - Pyramid Semiconductor Corporation |
4 / 12 page P4C174 Page 4 of 12 Document # SRAM118 REV C Symbol t RC t AA t OH t AC t LZ t HZ t OE t OLZ Read Cycle Time Address Access Time Address Change to Output Change Chip Enable LOW to Output Valid Chip Enable LOW to Output LOW-Z (1) Chip Enable HIGH to Output HIGH -Z (1) Output Enable LOW to Output Valid Output Enable LOW to Output LOW-Z (1) Min –8 Unit ns ns ns ns ns ns ns ns –15 –20 –10 –12 –25 Max Min Max Min Max Min Max Min Max Min Max 8 3 3 0 AC CHARACTERISTICS—READ CYCLE (V CC = 5V ± 10%, All Temperature Ranges) (2) t OHZ Output Enable HIGH to Output HIGH -Z (1) t PU Chip Enable LOW or Address Change to Powerup t pUPD Powerup to Powerdown Note: 1. Transition is measured ± 200 mV from steady state voltage with Output Load B. 0 8 8 5 5 5 20 10 3 3 0 0 10 10 5 6 5 20 12 3 3 0 0 12 12 5 6 5 20 15 3 3 0 0 15 15 8 8 5 20 20 3 3 0 0 20 20 8 10 8 20 25 3 3 0 0 25 25 10 12 10 25 ns ns ns Parameter READ CYCLE NO. 1 (OE OE OE OE OE CONTROLLED)(2, 3) |
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