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P4C187 Datasheet(PDF) 5 Page - Pyramid Semiconductor Corporation

Part No. P4C187
Description  ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS
Download  12 Pages
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Maker  PYRAMID [Pyramid Semiconductor Corporation]
Homepage  http://www.pyramidsemiconductor.com
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P4C187 Datasheet(HTML) 5 Page - Pyramid Semiconductor Corporation

 
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P4C187/187L
Page 5 of 12
Document # SRAM111 REV B
Notes:
9. CE and WE must be LOW for WRITE cycle.
10. If CE goes HIGH simultaneously with WE HIGH, the output remains
in a high impedance state.
11. Write Cycle Time is measured from the last valid address to the first
transition address.
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE
WE
WE
WE
WE CONTROLLED)(9)
AC CHARACTERISTICS - WRITE CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max
tWC
Write Cycle Time
10
12
15
20
25
35
45
55
70
85
tCW
Chip Enable Time to
End of Write
8
10
12152025303540
45
tAW
Address Valid to End
of Write
8
10
12152025303540
45
tAS
Address Set-up Time
00000
00000
tWP
Write Pulse Width
8
10
12
15
20
25
30
35
40
45
tAH
Address Hold Time
from End of Write
00000
00000
tDW
Data Valid to End of
Write
6
7
10
13
15
20
25
30
35
40
tDH
Data Hold Time00000
00000
tWZ
Write Enable to
Output in High Z
6
7
8
12
15
17
20
25
30
35
tOW
Output Active from
End of Write
00000
00000
-15-20
-25-35
-45-55
-70-85
Parameter
Symbol
-10
-12


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