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P4C168 Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation

Part No. P4C168
Description  ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS
Download  15 Pages
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Maker  PYRAMID [Pyramid Semiconductor Corporation]
Homepage  http://www.pyramidsemiconductor.com
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P4C168 Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation

 
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P4C168, P4C169, P4C170
Page 3 of 15
Document # SRAM107 REV A
AC CHARACTERISTICS—READ CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
§ P4C168 only
† P4C170 only
‡ Chip Select/Deselect for P4C169 and P4C170
Min Max Min Max Min Max Min Max Min Max
tRC
Read Cycle Time
12
15
20
25
35
ns
tAA
Address Access Time
12
15
20
25
35
ns
tAC§
Chip Enable Access Time
12
15
20
25
35
ns
tAC‡
Chip Select Access Time
8
9
12
15
20
ns
tOH
Output Hold from Address Change
22222
ns
tLZ‡
Chip Enable to Output in Low Z
22222
ns
tHZ†
Chip Disable to Output in High Z
7
8
9
10
15
ns
tOE†
Output Enable to Data Valid
8
10
12
15
15
ns
tOLZ†
Output Enable to Output in Low Z
00000
ns
tOHZ†
Output Disable to Output in High Z
6
7
9
11
15
ns
tRCS
Read Command Setup Time
00000
ns
tRCH
Read Command Hold Time
00000
ns
tPU§
Chip Enable to Power Up Time
00000
ns
tPD§
Chip Disable to Power Down Time
12
15
20
25
35
ns
Sym
Parameter
Unit
-35
-12
-15
-20
-25
AC CHARACTERISTICS—READ CYCLE (CONTINUED)
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
Min Max Min Max Min Max
tRC
Read Cycle Time
45
55
70
ns
tAA
Address Access Time
45
55
70
ns
tAC§
Chip Enable Access Time
45
55
70
ns
tOH
Output Hold from Address Change
2
2
2
ns
tLZ‡
Chip Enable to Output in Low Z
2
2
2
ns
tHZ†
Chip Disable to Output in High Z
25
25
30
ns
tRCS
Read Command Setup Time
0
0
0
ns
tRCH
Read Command Hold Time
0
0
0
ns
tPU§
Chip Enable to Power Up Time
0
0
0
ns
tPD§
Chip Disable to Power Down Time
45
55
70
ns
Sym
Parameter
Unit
-45
-55
-70


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