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P4C167 Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation

Part No. P4C167
Description  ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS
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Maker  PYRAMID [Pyramid Semiconductor Corporation]
Homepage  http://www.pyramidsemiconductor.com
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P4C167 Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation

 
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P4C167
Page 3 of 10
Document # SRAM106 REV A
*V
CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL.
DATA RETENTION CHARACTERISTICS (P4C167L Military Temperature Only)
Symbol
V
DR
I
CCDR
t
CDR
t
R
Parameter
V
CC for Data Retention
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
Test Conditons
CE
≥ V
CC –0.2V,
V
IN ≥ VCC –0.2V
or V
IN ≤ 0.2V
Min
2.0
0
t
RC
§
Typ.*
V
CC =
2.0V
3.0V
Max
V
CC =
2.0V
3.0V
Unit
10
15
600
900
V
µA
ns
ns
*T
A = +25¹C
§t
RC = Read Cycle Time
This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM
I
CC
Symbol
Parameter
Temperature
Range
Dynamic Operating Current*
Commercial
Industrial
Military
–10
N/A
–12
–15
–20
–25
–35
–45
Unit
N/A
mA
mA
mA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
N/A
150
155
160
170
180
N/A
170
160
155
150
145
180
170
160
155
150
N/A
N/A


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