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PRELIMINARY
CY7C1069DV33
Document #: 38-05478 Rev. *C
Page 5 of 9
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
Min.
Typ.
Max.
Unit
VDR
VCC for Data Retention
2
V
ICCDR
Data Retention Current
VCC = 2V , CE1 > VCC – 0.2V,
CE2 < 0.2V, VIN > VCC – 0.2V or
VIN < 0.2V
25
mA
tCDR
[3]
Chip Deselect to Data Retention Time
0
ns
tR
[11]
Operation Recovery Time
tRC
ns
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1[12,13]
Read Cycle No. 2(OE Controlled)[13,14]
Notes:
11. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 50 µs or stable at VCC(min.) > 50 µs
12. Device is continuously selected. CE1 = VIL, CE2 = VIH.
13. WE is HIGH for Read cycle.
14. Address valid prior to or coincident with CE1 transition LOW and CE2 transition HIGH.
3V
3V
tCDR
VDR > 2V
DATA RETENTION MODE
tR
CE
VCC
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
tRC
tASCE
tDOE
tLZOE
tLZSCE
tPU
HIGH IMPEDANCE
tHZOE
tPD
HIGH
OE
CE1
IMPEDANCE
ADDRESS
DATA OUT
VCC
SUPPLY
tHZSCE
CURRENT
ICC
ISB
CE2
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