4 / 8 page
CY7C1049DV33
Document #: 38-05475 Rev. *C
Page 4 of 8
Data Retention Characteristics Over the Operating Range
Parameter
Description
Conditions [13]
Min.
Max
Unit
VDR
VCC for Data Retention
2.0
V
ICCDR
Data Retention Current
VCC = VDR = 2.0V, CE > VCC – 0.3V
VIN > VCC – 0.3V or VIN < 0.3V
Ind’l
10
mA
Auto
15
mA
tCDR
[4]
Chip Deselect to Data Retention Time
0
ns
tR
[12]
Operation Recovery Time
tRC
ns
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1[14, 15]
Read Cycle No. 2 (OE Controlled)[15, 16]
Notes:
12. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 50 µs or stable at VCC(min.) > 50 µs
13. No input may exceed VCC + 0.3V.
14. Device is continuously selected. OE, CE = VIL.
15. WE is HIGH for Read cycle.
16. Address valid prior to or coincident with CE transition LOW.
3.0V
3.0V
tCDR
VDR > 2V
DATA RETENTION MODE
tR
CE
VCC
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZCE
tPD
HIGH
OE
CE
ICC
ISB
IMPEDANCE
ADDRESS
DATA OUT
V
CC
SUPPLY
CURRENT
[+] Feedback
[+] Feedback
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
