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2SK4121LS Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part No. 2SK4121LS
Description  N-Channel Silicon MOSFET General-Purpose Switching Device
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Maker  SANYO [Sanyo Semicon Device]
Homepage  http://www.ssdc-jp.com/eng/
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2SK4121LS Datasheet(HTML) 2 Page - Sanyo Semicon Device

   
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2SK4121LS
No. A0824-2/4
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=10mA, VGS=0V
450
V
Zero-Gate Voltage Drain Current
IDSS
VDS=360V, VGS=0V
100
µA
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
3
5
V
Forward Transfer Admittance
yfs
VDS=10V, ID=6A
3.3
6.5
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=6A, VGS=10V
0.43
0.56
Input Capacitance
Ciss
VDS=30V, f=1MHz
750
pF
Output Capacitance
Coss
VDS=30V, f=1MHz
165
pF
Reverse Transfer Capacitance
Crss
VDS=30V, f=1MHz
38
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
16
ns
Rise Time
tr
See specified Test Circuit.
54
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
98
ns
Fall Time
tf
See specified Test Circuit.
50
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=12A
30.3
nC
Gate-to-Source Charge
Qgs
VDS=200V, VGS=10V, ID=12A
5.2
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=200V, VGS=10V, ID=12A
18.5
nC
Diode Forward Voltage
VSD
IS=12A, VGS=0V
0.9
1.2
V
Package Dimensions
unit : mm (typ)
7509-002
Switching Time Test Circuit
Avalanche Resistance Test Circuit
0.7
2.55
2.55
1.2
0.9
0.75
1.2
4.5
2.8
12 3
10.0
3.2
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
PW=10µs
D.C.≤0.5%
P.G
RGS=50Ω
G
S
D
ID=6A
RL=33.3Ω
VDD=200V
VOUT
2SK4121LS
VIN
10V
0V
VIN
50Ω
≥50Ω
RG
VDD
L
10V
0V
2SK4121LS


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