Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

CY7C1020D Datasheet(PDF) 5 Page - Cypress Semiconductor

Part No. CY7C1020D
Description  512K (32K x 16) Static RAM
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1020D Datasheet(HTML) 5 Page - Cypress Semiconductor

  CY7C1020D Datasheet HTML 1Page - Cypress Semiconductor CY7C1020D Datasheet HTML 2Page - Cypress Semiconductor CY7C1020D Datasheet HTML 3Page - Cypress Semiconductor CY7C1020D Datasheet HTML 4Page - Cypress Semiconductor CY7C1020D Datasheet HTML 5Page - Cypress Semiconductor CY7C1020D Datasheet HTML 6Page - Cypress Semiconductor CY7C1020D Datasheet HTML 7Page - Cypress Semiconductor CY7C1020D Datasheet HTML 8Page - Cypress Semiconductor CY7C1020D Datasheet HTML 9Page - Cypress Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 11 page
background image
CY7C1020D
Document #: 38-05463 Rev. *E
Page 5 of 11
Switching Characteristics (Over the Operating Range) [6]
Parameter
Description
–10 (Industrial)
Unit
Min
Max
Read Cycle
tpower [7]
VCC(typical) to the first access
100
µs
tRC
Read Cycle Time
10
ns
tAA
Address to Data Valid
10
ns
tOHA
Data Hold from Address Change
3
ns
tACE
CE LOW to Data Valid
10
ns
tDOE
OE LOW to Data Valid
5
ns
tLZOE
OE LOW to Low Z [9]
0ns
tHZOE
OE HIGH to High Z [8, 9]
5ns
tLZCE
CE LOW to Low Z [9]
3ns
tHZCE
CE HIGH to High Z [8, 9]
5ns
tPU [10]
CE LOW to Power-Up
0
ns
tPD [10]
CE HIGH to Power-Down
10
ns
tDBE
Byte Enable to Data Valid
5
ns
tLZBE
Byte Enable to Low Z
0
ns
tHZBE
Byte Disable to High Z
5
ns
Write Cycle [11, 12]
tWC
Write Cycle Time
10
ns
tSCE
CE LOW to Write End
7
ns
tAW
Address Set-Up to Write End
7
ns
tHA
Address Hold from Write End
0
ns
tSA
Address Set-Up to Write Start
0
ns
tPWE
WE Pulse Width
7
ns
tSD
Data Set-Up to Write End
6
ns
tHD
Data Hold from Write End
0
ns
tLZWE
WE HIGH to Low Z [9]
3ns
tHZWE
WE LOW to High Z [8, 9]
5ns
tBW
Byte Enable to End of Write
7
ns
Notes
6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 30-pF load capacitance.
7. tPOWER gives the minimum amount of time that the power supply should be at typical VCC values until the first memory access can be performed.
8. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (c) of “AC Test Loads and Waveforms [5]” on page 4. Transition is measured when the
outputs enter a high impedance state.
9. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
10. This parameter is guaranteed by design and is not tested.
11. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE/BLE LOW. CE, WE and BHE/BLE must be LOW to initiate a write and
the transition of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
12. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
[+] Feedback
[+] Feedback


Html Pages

1  2  3  4  5  6  7  8  9  10  11 


Datasheet Download

Go To PDF Page

Related Electronics Part Number

Part No.DescriptionHtml ViewManufacturer
CY7C1020CV33_06 512K 32K x 16 Static RAM 1  2  3  4  5  More Cypress Semiconductor
IDT70V9379L HIGH-SPEED 3.3V 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 1  2  3  4  5  More Integrated Device Technology
CY7C199C_06 256K 32K x 8 Static RAM 1  2  3  4  5  More Cypress Semiconductor
P3C1256 HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM 1  2  3  4  5  More Pyramid Semiconductor Corporation
CY7C199CN 256K 32K x 8 Static RAM 1  2  3  4  5  More Cypress Semiconductor
CY7C1020V 32K x 16 Static RAM 1  2  3  4  5  More Cypress Semiconductor
CY7C199D 256K 32K x 8 Static RAM 1  2  3  4  5  More Cypress Semiconductor
CY7C199N 32K x 8 Static RAM 1  2  3  4  5  More Cypress Semiconductor
IS61C256AL_06 32K x 8 HIGH-SPEED CMOS STATIC RAM 1  2  3  4  5  More Integrated Silicon Solution, Inc
CY7C1020B_06 32K x 16 Static RAM 1  2  3  4  5  More Cypress Semiconductor

Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn