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P3C125612TI Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation |
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P3C125612TI Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation |
3 / 10 page P3C1256 Page 3 of 10 Document # SRAM122 REV B AC ELECTRICAL CHARACTERISTICS - READ CYCLE (Over Recommended Operating Temperature & Supply Voltage) CAPACITANCES(4) (V CC = 5.0V, TA = 25°C, f = 1.0 MHz) Symbol Parameter Test Conditions Max Unit C IN C OUT Input Capacitance Output Capacitance V IN = 0V V OUT = 0V 10 10 pF pF Symbol Parameter Min Unit t RC ns t AA Address Access Time t AC Chip Enable Access Time t OH Output Hold from Address Change ns t LZ Chip Enable to Output in Low Z ns t HZ Chip Disable to Output in High Z ns t OE Output Enable Low to Data Valid ns t OLZ Output Enable Low to Low Z ns t OHZ Output Enable High to High Z t PU Chip Enable to Power Up Time ns t PD Chip Disable to Power Down Time ns Read Cycle Time 2 2 0 -12 ns ns ns -25 -20 -15 Max Min Max 25 25 25 2 2 10 12 0 10 0 20 Min 20 20 20 2 2 9 11 0 9 0 20 Max Min Max 15 15 15 2 2 8 9 0 7 0 15 12 12 12 7 7 0 6 12 *Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate. The device is continuously enabled for writing, i.e., CE, and WE ≤ V IL (max), OE is high. Switching inputs are 0V and 3V. POWER DISSIPATION CHARACTERISTICS VS. SPEED Symbol Parameter Unit I CC Dynamic Operating Current Commercial Industrial mA mA Temperature Range -12 110 N/A -15 100 115 -20 95 110 -25 90 105 Test Conditions * * |
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