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CY7C199CN Datasheet(PDF) 1 Page - Cypress Semiconductor

Part No. CY7C199CN
Description  256K (32K x 8) Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C199CN Datasheet(HTML) 1 Page - Cypress Semiconductor

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CY7C199CN
256K (32K x 8) Static RAM
Cypress Semiconductor Corporation
198 Champion Court
San Jose
, CA 95134-1709
408-943-2600
Document #: 001-06435 Rev. *B
Revised March 08, 2007
Features
• Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns
• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)
• CMOS for optimum speed and power
• TTL-compatible inputs and outputs
• 2.0V data retention
• Low CMOS standby power
• Automated power down when deselected
• Available in Pb-free 28-pin TSOP I, 28-pin Molded SOJ and
28-pin DIP packages
General Description [1]
The CY7C199CN is a high performance CMOS Asynchronous
SRAM organized as 32K by 8 bits that supports an
asynchronous memory interface. The device features an
automatic power down feature that reduces power
consumption when deselected.
See the “Truth Table” on page 3 in this data sheet for a
complete description of read and write modes.
The CY7C199CN is available in Pb-free 28-pin TSOP I, 28-pin
Molded SOJ and 28-pin DIP package(s).
Logic Block Diagram
Product Portfolio
–12
–15
–20
–25
Unit
Maximum Access Time
12
15
20
25
ns
Maximum Operating Current
85
80
75
75
mA
Maximum CMOS Standby Current
(low power)
500
500
500
500
µA
RAM Array
Column Decoder
Input Buffer
A
X
Power
Down
Circuit
I/Ox
OE
WE
CE
X
Note
1. For best practices recommendations, refer to the Cypress application note System Design Guidelines on www.cypress.com.
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