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P4C163 Datasheet(PDF) 6 Page - Pyramid Semiconductor Corporation

Part No. P4C163
Description  ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS
Download  12 Pages
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Maker  PYRAMID [Pyramid Semiconductor Corporation]
Homepage  http://www.pyramidsemiconductor.com
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P4C163 Datasheet(HTML) 6 Page - Pyramid Semiconductor Corporation

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P4C163/163L
Page 6 of 12
Document # SRAM120 REV C
-25
-35
-45
Min Max Min Max Min Max
t
WC
Write Cycle Time
25
35
45
ns
t
CW
Chip Enable
18
25
33
ns
Time to End of Write
t
AW
Address Valid to
18
25
33
ns
End of Write
t
AS
Address Set-up Time
0
0
0
ns
t
WP
Write Pulse Width
18
20
25
ns
t
AH
Address Hold Time
0
0
0
ns
t
DW
Data Valid to End
13
15
20
ns
of Write
t
DH
Data Hold Time
0
0
0
ns
t
WZ
Write Enable to
10
14
18
ns
Output in High Z
t
OW
Output Active
3
5
5
ns
from End of Write
AC CHARACTERISTICS—WRITE CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
Symbol
Parameter
Unit
WRITE CYCLE NO. 1 (WE
WE
WE
WE
WE CONTROLLED)(11)
Notes:
11. CE
1 and WE must be LOW, and CE2 HIGH for WRITE cycle.
12. OE is LOW for this WRITE cycle to show t
WZ and tOW.
13. If CE
1 goes HIGH, or CE2 goes LOW, simultaneously with WE
HIGH, the output remains in a low impedance state.
14. Write Cycle Time is measured from the last valid address to the first
transitioning address.


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