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P3C1256 Datasheet(PDF) 2 Page - Pyramid Semiconductor Corporation

Part No. P3C1256
Description  HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM
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Maker  PYRAMID [Pyramid Semiconductor Corporation]
Homepage  http://www.pyramidsemiconductor.com
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P3C1256 Datasheet(HTML) 2 Page - Pyramid Semiconductor Corporation

 
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P3C1256
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Document # SRAM122 REV B
RECOMMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE
Temperature Range (Ambient)
Supply Voltage
3.0V
≤ V
CC ≤ 3.6V
Industrial (-40°C to 85°C)
3.0
≤ V
CC ≤ 3.6V
Commercial (0°C to 70°C)
V
CC = 3.6V, IOUT = 0 mA
CE = V
CC
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)(2)
Symbol
Parameter
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
I
SB
I
SB1
Output High Voltage
(I/O
0 - I/O7)
Output Low Voltage
(I/O
0 - I/O8)
Input High Voltage
Input Low Voltage
V
CC Current
CMOS Standby Current
V
CC Current
TTL Standby Current
Output Leakage Current
Input Leakage Current
I
OH = –4mA, VCC = 3.0V
I
OL = 8 mA
I
OL = 10 mA
V
CC = 3.6V, IOUT = 0 mA
CE = V
CC
GND
≤ V
OUT ≤ VCC
CE = V
CC
GND
≤ V
IN ≤ VCC
Test Conditions
Min
Max
Unit
2.4
2.2
-0.5(3)
V
V
V
V
V
µA
µA
mA
mA
0.4
0.5
V
CC + 0.3
0.8
20
3
-5
-5
+5
+5
MAXIMUM RATINGS(1)
Stresses greater than those listed can cause permanent damage to the device. These are absolute stress ratings
only. Functional operation of the device is not implied at these or any other conditions in excess of those given in
the operational sections of this data sheet. Exposure to Maximum Ratings for extended periods can adversely
affect device reliability.
Symbol
Parameter
Min
Max
Unit
V
CC
Supply Voltage with Respect to GND
-0.5
7.0
V
V
TERM
Terminal Voltage with Respect to GND (up to 7.0V)
-0.5
V
CC + 0.5
V
T
A
Operating Ambient Temperature
-40
85
°C
S
TG
-55
125
°C
I
OUT
Output Current into Low Outputs
25
mA
I
LAT
Latch-up Current
>200
mA
Storage Temperature


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