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P3C1041 Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation

Part No. P3C1041
Description  HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM
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Maker  PYRAMID [Pyramid Semiconductor Corporation]
Homepage  http://www.pyramidsemiconductor.com
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P3C1041 Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation

 
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P3C1041
Page 3 of 10
Document # SRAM130 REV OR
*V
CC = 3.6V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH.
I
CC
Symbol
Parameter
Temperature
Range
Dynamic Operating Current*
Commercial
Industrial
N/A
–12
–10
–15
–20
Unit
mA
mA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
90
85
95
80
90
75
85
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC = 3.3V ± 0.3V, All Temperature Ranges)
(2)
Sym.
t
RC
t
AA
t
AC
t
OH
t
LZ
t
HZ
t
OE
t
OLZ
t
OHZ
t
PU
t
PD
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Output Enable Low to Low Z
Output Enable High to High Z
Chip Enable to Power Up Time
Chip Disable to Power Down Time
Output Enable Low to Data Valid
Max
Min
Max
Min
Max
Min
Max
Min
-10
-12
-15
-20
Unit
10
3
3
0
0
10
10
5
5
5
10
12
3
3
0
0
12
12
6
6
6
12
15
3
3
0
0
15
15
7
7
7
15
20
3
3
0
0
20
20
8
8
8
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
BE
Byte Enable to Data Valid
5
6
7
8ns
t
LZBE
Byte Enable to Low Z
0
00
0
ns
t
HZBE
Byte Disable to High Z
6
6
7
8ns


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