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CY7C199C Datasheet(PDF) 5 Page - Cypress Semiconductor

Part No. CY7C199C
Description  256K (32K x 8) Static RAM
Download  13 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C199C Datasheet(HTML) 5 Page - Cypress Semiconductor

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CY7C199C
Document #: 38-05408 Rev. *C
Page 5 of 13
AC Test Conditions
Parameter
Description
Nom.
Unit
C1
Capacitor 1
30
pF
C2
Capacitor 2
5
R1
Resistor 1
480
R2
Resistor 2
255
RTH
Resistor Thevenin
167
VTH
Voltage Thevenin
1.73
V
AC Electrical Characteristics[5, 6, 7]
Parameter
Description
12 ns
15 ns
20 ns
Unit
Min
Max
Min
Max
Min
Max
tRC
Read Cycle Time
12
15
20
ns
tAA
Address to Data Valid
12
15
20
ns
tOHA
Data Hold from Addres Change
3
3
3
ns
tACE
CE to Data Valid
12
15
20
ns
tDOE
OE to Data Valid
5
7
9
ns
tLZOE
OE to Low Z
0
0
0
ns
tHZOE
OE to High Z
5
7
9
ns
tLZCE
CE to Low Z
3
3
3
ns
tHZCE
CE to High Z
5
7
9
ns
tPU
CE to Power-up
0
0
0
ns
tPD
CE to Power-down
12
15
20
ns
tWC
Write Cycle Time
12
15
20
ns
tSCE
CE to Write End
9
10
15
ns
tAW
Address Set-up to Write End
9
10
15
ns
tHA
Address Hold from Write End
0
0
0
ns
tSA
Address Set-up to Write Start
0
0
0
ns
tPWE
WE Pulse Width
8
9
15
ns
tSD
Data Set-up to Write End
8
9
10
ns
tHD
Data Hold from Write End
0
0
0
ns
tHZWE
WE LOW to High Z
7
7
10
ns
tLZWE
WE HIGH to Low Z
3
3
3
ns
Notes:
5. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
6. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any
of these signals can terminate the write. The input data set–up and hold timing should be referenced to the leading edge of the signal that terminates the write.
7. tHZOE, tHZCE, tHZWE are specified as in part (b) of the A/C Test Loads. Transitions are measured ± 200 mV from steady state voltage.
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