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NE3510M04-T2-A Datasheet(PDF) 1 Page - California Eastern Labs |
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NE3510M04-T2-A Datasheet(HTML) 1 Page - California Eastern Labs |
1 / 11 page DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Document No. PG10676EJ01V0DS (1st edition) Date Published July 2007 NS 2007 FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only) • Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS • Satellite radio (SDARS, DMB, etc.) antenna LNA • Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number Order Number Package Quantity Marking Supplying Form 1 8 V ) l e e r n o N ( s c p 0 5 A - 4 0 M 0 1 5 3 E N 4 0 M 0 1 5 3 E N NE3510M04-T2 NE3510M04-T2-A Flat-lead 4-pin thin- type super minimold (M04) (Pb-Free) 3 kpcs/reel • 8 mm wide embossed taping • Pin 1 (Source), Pin 2 (Drain) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3510M04-A ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS 3.0 V I t n e r r u C n i a r D D IDSS mA I t n e r r u C e t a G G 140 A Total Power Dissipation Ptot Note 125 mW Channel Temperature Tch +150 C Storage Temperature Tstg 65 to +150 C Note Mounted on 1.08 cm 2 1.0 mm (t) glass epoxy PCB |
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