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NCP5304 Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP5304 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 15 page NCP5304 http://onsemi.com 4 ELECTRICAL CHARACTERISTIC (VCC = Vboot = 15 V, VGND = Vbridge, -40°C < TJ < 125°C, Outputs loaded with 1 nF) Rating Symbol TJ -40°C to 125°C Units Min Typ Max OUTPUT SECTION Output high short circuit pulsed current VDRV = 0 V, PW v 10 ms (Note 1) IDRVsource - 250 - mA Output low short circuit pulsed current VDRV = Vcc, PW v 10 ms (Note 1) IDRVsink - 500 - mA Output resistor (Typical value @ 25 °C) Source ROH - 30 60 W Output resistor (Typical value @ 25 °C) Sink ROL - 10 20 W High level output voltage, VBIAS-VDRV_XX @ IDRV_XX = 20 mA VDRV_H - 0.7 1.6 V Low level output voltage VDRV_XX @ IDRV_XX = 20 mA VDRV_L - 0.2 0.6 V DYNAMIC OUTPUT SECTION Turn-on propagation delay (Vbridge = 0 V) tON - 100 170 ns Turn-off propagation delay (Vbridge = 0 V or 50 V) (Note 2) tOFF - 100 170 ns Output voltage rise time (from 10% to 90% @ Vcc = 15 V) with 1 nF load tr - 85 160 ns Output voltage fall time (from 90% to 10% @VCC = 15 V) with 1 nF load tf - 35 75 ns Propagation delay matching between the High side and the Low side @ 25 °C (Note 3) Dt - 20 35 ns Internal fixed dead time (Note 4) DT 65 100 190 ns Minimum input width that changes the output tPW1 - - 50 ns Maximum input width that does not change the output tPW2 20 - - ns INPUT SECTION Low level input voltage threshold VIN - - 0.8 V Input pull-down resistor (VIN < 0.5 V) RIN - 200 - k W High level input voltage threshold VIN 2.3 - - V Logic “1” input bias current @ VIN_XX = 5 V @ 25°C IIN+ - 5 25 mA Logic “0” input bias current @ VIN_XX = 0 V @ 25°C IIN- - - 2.0 mA SUPPLY SECTION Vcc UV Start-up voltage threshold Vcc_stup 8.0 8.9 9.9 V Vcc UV Shut-down voltage threshold Vcc_shtdwn 7.3 8.2 9.1 V Hysteresis on Vcc Vcc_hyst 0.3 0.7 - V Vboot Start-up voltage threshold reference to bridge pin (Vboot_stup = Vboot - Vbridge) Vboot_stup 8.0 8.9 9.9 V Vboot UV Shut-down voltage threshold Vboot_shtdwn 7.3 8.2 9.1 V Hysteresis on Vboot Vboot_shtdwn 0.3 0.7 - V Leakage current on high voltage pins to GND (VBOOT = VBRIDGE = DRV_HI = 600 V) IHV_LEAK - 5 40 mA Consumption in active mode (Vcc = Vboot, fsw = 100 kHz and 1 nF load on both driver outputs) ICC1 - 4 5 mA Consumption in inhibition mode (Vcc = Vboot) ICC2 - 250 400 mA Vcc current consumption in inhibition mode ICC3 - 200 - mA Vboot current consumption in inhibition mode ICC4 - 50 - mA 1. Parameter guaranteed by design 2. Turn-off propagation delay @ Vbridge = 600 V is guaranteed by design 3. See characterization curve for Δt parameters variation on the full range temperature. 4. Both Integrated a dead time will be mesured and characterised. The first when IN_HI changes (High to Low and Low to High), and the second when HI_LO changes (High to Low and Low to High). These parameters will be updated after the characterization results. 5. Timing diagram definition see: Figure 5 and Figure 6. |
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