ICS8535I-31

LOW SKEW, 1-TO-4, CRYSTAL OSCILLATOR/LVCMOS-TO-3.3V LVPECL FANOUT BUFFER

IDT™ / ICS™3.3V LVPECL FANOUT BUFFER

10

ICS8535AGI-31 REV. A AUGUST 16, 2007

Power Considerations

This section provides information on power dissipation and junction temperature for the ICS8535I-31.

Equations and example calculations are also provided.

1.

Power Dissipation.

The total power dissipation for the ICS8535I-31 is the sum of the core power plus the power plus the power dissipated in the load(s).

NOTE: Please refer to Section 3 for details on calculating power dissipated in the load.

•

•

If all outputs are loaded, the total power is 4 * 30mW = 120mW

2. Junction Temperature.

Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad and directly affects the reliability of the device.

The maximum recommended junction temperature for HiPerClockS devices is 125°C.

The equation for Tj is as follows: Tj =

θ

Tj = Junction Temperature

θ

Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)

In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance

θ

air flow of 200 linear feet per meter and a multi-layer board, the appropriate value is 66.6°C/W per Table 7 below.

Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:

85°C + 0.345W * 66.6°C/W = 108°C. This is below the limit of 125°C.

This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type

of board (single layer or multi-layer).

θ

Linear Feet per minute

0200

500

Single-Layer PCB, JEDEC Standard Test Boards

114.5°C/W

98.0°C/W

88.0°C/W

Multi-Layer PCB, JEDEC Standard Test Boards

73.2°C/W

66.6°C/W

63.5°C/W

NOTE: Most modern PCB designs use multi-layered boards. The data in the second row pertains to most designs.